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Results: 1-11 |
Results: 11
INFRARED PROPERTIES OF ETCHED MERCURIC IODIDE SURFACES
Authors: SIESKIND M AMANN M PONPON JP
Citation: M. Sieskind et al., INFRARED PROPERTIES OF ETCHED MERCURIC IODIDE SURFACES, Applied physics A: Materials science & processing, 66(6), 1998, pp. 655-658
INFLUENCE OF WATER AND WATER-VAPOR ON THE CHARACTERISTICS OF KI TREATED HGI2 DETECTORS
Authors: PONPON JP AMANN M SIESKIND M
Citation: Jp. Ponpon et al., INFLUENCE OF WATER AND WATER-VAPOR ON THE CHARACTERISTICS OF KI TREATED HGI2 DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 412(1), 1998, pp. 104-108
SEMICONDUCTOR X-RAY-DETECTORS - RECENT DE VELOPMENTS
Authors: PONPON JP SIFFERT P
Citation: Jp. Ponpon et P. Siffert, SEMICONDUCTOR X-RAY-DETECTORS - RECENT DE VELOPMENTS, Journal de physique. IV, 6(C4), 1996, pp. 703-719
CHARACTERIZATION OF THE HGI2 SURFACE-LAYER AFTER KI ETCHING
Authors: PONPON JP SIESKIND M AMANN M BENTZ A CORBU C
Citation: Jp. Ponpon et al., CHARACTERIZATION OF THE HGI2 SURFACE-LAYER AFTER KI ETCHING, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 112-116
RECENT ADVANCES IN GAMMA- AND X-RAY SPECTROMETRY BY MEANS OF MERCURICIODIDE DETECTORS
Authors: PONPON JP SIESKIND M
Citation: Jp. Ponpon et M. Sieskind, RECENT ADVANCES IN GAMMA- AND X-RAY SPECTROMETRY BY MEANS OF MERCURICIODIDE DETECTORS, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 380(1-2), 1996, pp. 173-178
SYSTEMATIC STUDY OF MASSIVE GERMANIUM PIN DIODE DETECTORS AT 20 MK
Authors: LHOTE D NAVICK XF BARBIER A STAB L CHAPELLIER M CHAUMONT J CHARDIN G PONPON JP PROSTAKOV I YVON D
Citation: D. Lhote et al., SYSTEMATIC STUDY OF MASSIVE GERMANIUM PIN DIODE DETECTORS AT 20 MK, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 370(1), 1996, pp. 193-195
A SOLID IONIZATION-CHAMBER OPERATED AT 20 MK
Authors: NAVICK XF LHOTE D BARBIER A STAB L CHAPELLIER M CHAUMONT J CHARDIN G PONPON JP PROSTAKOV I YVON D
Citation: Xf. Navick et al., A SOLID IONIZATION-CHAMBER OPERATED AT 20 MK, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 370(1), 1996, pp. 213-214
STUDY OF IONIZATION PARTICLE DETECTORS AT MILLIKELVIN TEMPERATURES
Authors: LHOTE D NAVICK XF KEMMATHER B BARBIER A STAB L CHAPELLIER M CHAUMONT J CHARDIN G PONPON JP PROSTAKOV I TOURBOT R YVON D
Citation: D. Lhote et al., STUDY OF IONIZATION PARTICLE DETECTORS AT MILLIKELVIN TEMPERATURES, Czechoslovak journal of Physics, 46, 1996, pp. 2903-2904
A SIMPLE PROCEDURE BASED ON THE PCD METHOD FOR DETERMINATION OF RECOMBINATION LIFETIME AND SURFACE RECOMBINATION VELOCITY IN SILICON
Authors: FONTAINE JC BARTHE S PONPON JP SCHUNCK JP SIFFERT P
Citation: Jc. Fontaine et al., A SIMPLE PROCEDURE BASED ON THE PCD METHOD FOR DETERMINATION OF RECOMBINATION LIFETIME AND SURFACE RECOMBINATION VELOCITY IN SILICON, Measurement science & technology, 5(1), 1994, pp. 47-50
SINGLE-SIDED X-Y POSITION-SENSITIVE SILICON STRIP DETECTOR - A DIFFERENT APPROACH
Authors: FONTAINE JC BARTHE S PONPON JP SCHUNCK JP SIFFERT P
Citation: Jc. Fontaine et al., SINGLE-SIDED X-Y POSITION-SENSITIVE SILICON STRIP DETECTOR - A DIFFERENT APPROACH, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 348(2-3), 1994, pp. 428-430
COMPARISON OF GENERATION AND RECOMBINATION LIFETIMES IN HIGH-RESISTIVITY SILICON
Authors: FONTAINE JC BARTHE S PONPON JP SCHUNCK JP SIFFERT P
Citation: Jc. Fontaine et al., COMPARISON OF GENERATION AND RECOMBINATION LIFETIMES IN HIGH-RESISTIVITY SILICON, Journal of applied physics, 76(1), 1994, pp. 336-341
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