AAAAAA

   
Results: 1-3 |
Results: 3
HIGH-TEMPERATURE SILICON-CARBIDE MOSFETS WITH VERY-LOW DRAIN LEAKAGE CURRENT
Authors: BILLON T OUISSE T LASSAGNE P JASSAUD C PONTHENIER JL BAUD L BECOURT N MORFOULI P
Citation: T. Billon et al., HIGH-TEMPERATURE SILICON-CARBIDE MOSFETS WITH VERY-LOW DRAIN LEAKAGE CURRENT, Electronics Letters, 30(2), 1994, pp. 170-171
INFLUENCE OF TEMPERATURE ON THE FORMATION BY REACTIVE CVD OF A SILICON-CARBIDE BUFFER LAYER ON SILICON
Authors: BECOURT N PONTHENIER JL PAPON AM JAUSSAUD C
Citation: N. Becourt et al., INFLUENCE OF TEMPERATURE ON THE FORMATION BY REACTIVE CVD OF A SILICON-CARBIDE BUFFER LAYER ON SILICON, Physica. B, Condensed matter, 185(1-4), 1993, pp. 79-84
CHARACTERIZATION OF THE BUFFER LAYER IN SIC HETEROEPITAXY
Authors: BECOURT N CROS B PONTHENIER JL BERJOAN R PAPON AM JAUSSAUD C
Citation: N. Becourt et al., CHARACTERIZATION OF THE BUFFER LAYER IN SIC HETEROEPITAXY, Applied surface science, 68(4), 1993, pp. 461-466
Risultati: 1-3 |