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Results: 1-4 |
Results: 4
IN-SITU CHARACTERIZATION OF II-VI MOLECULAR-BEAM EPITAXY
Authors: GAINES JM PONZONI CA
Citation: Jm. Gaines et Ca. Ponzoni, IN-SITU CHARACTERIZATION OF II-VI MOLECULAR-BEAM EPITAXY, Physica status solidi. b, Basic research, 187(2), 1995, pp. 309-313
ELECTRICAL-TRANSPORT IN N-TYPE ZNMGSSE GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS
Authors: MARSHALL T PETRUZZELLO JA HERKO SP GAINES JM PONZONI CA
Citation: T. Marshall et al., ELECTRICAL-TRANSPORT IN N-TYPE ZNMGSSE GROWN BY MOLECULAR-BEAM EPITAXY ON GAAS, Journal of electronic materials, 23(3), 1994, pp. 255-258
AN INVESTIGATION OF MBE GROWTH OF (ZN,MG)SE USING RHEED OSCILLATIONS
Authors: GAINES JM PONZONI CA
Citation: Jm. Gaines et Ca. Ponzoni, AN INVESTIGATION OF MBE GROWTH OF (ZN,MG)SE USING RHEED OSCILLATIONS, Surface science, 310(1-3), 1994, pp. 307-313
BEATING IN RHEED OSCILLATIONS OBSERVED DURING MEE GROWTH OF ZNSE
Authors: GAINES JM PONZONI CA
Citation: Jm. Gaines et Ca. Ponzoni, BEATING IN RHEED OSCILLATIONS OBSERVED DURING MEE GROWTH OF ZNSE, Surface science, 290(1-2), 1993, pp. 172-178
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