Authors:
PETFORDLONG AK
PORTIER X
BAYLEGUILLEMAUD P
ANTHONY TC
BRUG JA
Citation: Ak. Petfordlong et al., IN-SITU TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF THE MAGNETIZATIONREVERSAL MECHANISM IN INFORMATION-STORAGE MATERIALS, MICROSCOPY AND MICROANALYSIS, 4(3), 1998, pp. 325-333
Authors:
PORTIER X
PETFORDLONG AK
ANTHONY TC
BRUG JA
Citation: X. Portier et al., CONTRIBUTION OF THE MAGNETIC-FIELD-INDUCED BY THE CURRENT PASSING THROUGH A SPIN-VALVE ELEMENT, Journal of magnetism and magnetic materials, 187(2), 1998, pp. 145-153
Authors:
PORTIER X
TSYMBAL EY
PETFORDLONG AK
ANTHONY TC
BRUG JA
Citation: X. Portier et al., CORRELATION BETWEEN DOMAIN-STRUCTURE AND MAGNETORESISTANCE IN AN ACTIVE SPIN-VALVE ELEMENT, Physical review. B, Condensed matter, 58(2), 1998, pp. 591-594
Authors:
PORTIER X
PETFORDLONG AK
BAYLEGUILLEMAUD P
ANTHONY TC
BRUG JA
Citation: X. Portier et al., A MICROSTRUCTURAL STUDY OF ANNEALED TI CO/CU/CO/MNFE/TI SPIN-VALVE FILMS/, Applied physics letters, 72(1), 1998, pp. 118-120
Authors:
GUEDJ C
PORTIER X
HAIRIE A
BOUCHIER D
CALVARIN G
PIRIOU B
Citation: C. Guedj et al., CARBON AND GERMANIUM DISTRIBUTIONS IN SI1-X-YGEXCY LAYERS EPITAXIALLYGROWN ON SI(001) BY RTCVD, Thin solid films, 294(1-2), 1997, pp. 129-132
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Authors:
PORTIER X
PETFORDLONG AK
DOOLE RC
ANTHONY TC
BRUG JA
Citation: X. Portier et al., IN-SITU MAGNETORESISTANCE MEASUREMENTS ON SPIN-VALVE ELEMENTS COMBINED WITH LORENTZ TRANSMISSION ELECTRON-MICROSCOPY, IEEE transactions on magnetics, 33(5), 1997, pp. 3574-3579
Authors:
GUEDJ C
BOUCHIER D
BOUCAUD P
HINCELIN G
PORTIER X
LHOIR A
BODNAR S
REGOLINI JL
Citation: C. Guedj et al., STRUCTURAL PARTICULARITIES OF CARBON-INCORPORATED SI-GE HETEROSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 36(1-3), 1996, pp. 286-290
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Citation: X. Portier et al., HIGH-RESOLUTION ELECTRON-MICROSCOPY OBSERVATIONS OF SILICON NICKEL SILICIDE INTERFACES IN A SIGMA=25 SILICON BICRYSTAL, Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties, 71(5), 1995, pp. 1109-1123
Citation: R. Rizk et al., EVOLUTION OF ELECTRICAL-ACTIVITY AND STRUCTURE OF NICKEL PRECIPITATESWITH THE TREATMENT TEMPERATURE OF A SIGMA=25 SILICON BICRYSTAL, Journal of applied physics, 77(5), 1995, pp. 1875-1880
Citation: R. Rizk et al., ELECTRICAL AND STRUCTURAL STUDIES OF COPPER AND NICKEL PRECIPITATES IN A SIGMA=25 SILICON BICRYSTAL, Journal of applied physics, 76(2), 1994, pp. 952-958