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Results: 1-11 |
Results: 11

Authors: POTHIER H GUERON S BIRGE NO ESTEVE D DEVORET MH
Citation: H. Pothier et al., ENERGY-DISTRIBUTION OF ELECTRONS IN AN OUT-OF-EQUILIBRIUM METALLIC WIRE (VOL 103, PG 313, 1997), Zeitschrift fur Physik. B, Condensed matter, 104(1), 1997, pp. 178-182

Authors: POTHIER H GUERON S BIRGE NO ESTEVE D
Citation: H. Pothier et al., ENERGY-DISTRIBUTION OF ELECTRONS IN AND OUT-OF-EQUILIBRIUM METALLIC WIRE, Zeitschrift fur Physik. B, Condensed matter, 103(2), 1997, pp. 313-318

Authors: POTHIER H GUERON S BIRGE NO ESTEVE D DEVORET MH
Citation: H. Pothier et al., ENERGY-DISTRIBUTION FUNCTION OF QUASI-PARTICLES IN MESOSCOPIC WIRES, Physical review letters, 79(18), 1997, pp. 3490-3493

Authors: GUERON S POTHIER H BIRGE NO ESTEVE D DEVORET MH
Citation: S. Gueron et al., SUPERCONDUCTING PROXIMITY EFFECT PROBED ON A MESOSCOPIC LENGTH SCALE, Physical review letters, 77(14), 1996, pp. 3025-3028

Authors: POTHIER H GUERON S BIRGE NO ESTEVE D DEVORET MH
Citation: H. Pothier et al., THE SUPERCONDUCTING PROXIMITY EFFECT PROBED ON A MESOSCOPIC LENGTH SCALE, Czechoslovak journal of Physics, 46, 1996, pp. 2319-2320

Authors: POTHIER H GUERON S ESTEVE D DEVORET MH
Citation: H. Pothier et al., INFLUENCE OF ELECTRONIC INTERFERENCES ON THE ANDREEV CONDUCTANCE, Physica. B, Condensed matter, 203(3-4), 1994, pp. 226-232

Authors: HAUG RJ POTHIER H WEIS J VONKLITZING K PLOOG K
Citation: Rj. Haug et al., SINGLE-ELECTRON TRANSISTORS REALIZED IN IN-PLANE-GATE AND TOP-GATE TECHNOLOGY, Solid-state electronics, 37(4-6), 1994, pp. 995-999

Authors: POTHIER H GUERON S ESTEVE D DEVORET MH
Citation: H. Pothier et al., FLUX-MODULATED ANDREEV CURRENT CAUSED BY ELECTRONIC INTERFERENCE, Physical review letters, 73(18), 1994, pp. 2488-2491

Authors: POTHIER H GUERON S ESTEVE D DEVORET MH
Citation: H. Pothier et al., FLUX-MODULATED ANDREEV CURRENT CAUSED BY ELECTRONIC INTERFERENCE, Physical review letters, 73(18), 1994, pp. 2488-2491

Authors: POTHIER H LAFARGE P ESTEVE D URBINA C DEVORET MH
Citation: H. Pothier et al., PASSING ELECTRONS ONE BY ONE - IS A 10-8 ACCURACY ACHIEVABLE, IEEE transactions on instrumentation and measurement, 42(2), 1993, pp. 324-330

Authors: POTHIER H WEIS J HAUG RJ VONKLITZING K PLOOG K
Citation: H. Pothier et al., REALIZATION OF AN IN-PLANE-GATE SINGLE-ELECTRON TRANSISTOR, Applied physics letters, 62(24), 1993, pp. 3174-3176
Risultati: 1-11 |