Authors: VOLODIN VA EFREMOV MD PRINTS VY PREOBRAZHENSKII PV SEMYAGIN BR GOVOROV AO

Citation: Va. Volodin et al., SPLITTING OF TRANSVERSE OPTICAL PHONON MODES LOCALIZED IN GAAS QUANTUM WIRES ON A FACETED (311)A SURFACE, JETP letters, 66(1), 1997, pp. 47-51

Authors: VOLODIN VA EFREMOV MD PRINTS VY PREOBRAZHENSKII VV SEMYAGIN BR

Citation: Va. Volodin et al., OBSERVATION OF LO-PHONON LOCALIZATION IN GAAS QUANTUM WIRES ON FACETED (311)A SURFACES, JETP letters, 63(12), 1996, pp. 994-999

Authors: SAMOILOV VA YAKUSHEVA NA PRINTS VY

Citation: Va. Samoilov et al., EFFECT OF THE ISOVALENT ANTIMONY DOPANT ON THE FORMATION OF ELECTRICALLY ACTIVE DEFECTS IN N-TYPE GAAS GROWN BY MEANS OF LIQUID-PHASE EPITAXY FROM A BISMUTH MOLTEN SOLUTION, Semiconductors, 28(9), 1994, pp. 901-905

Authors: KACHURIN GA OBODNIKOV VI PRINTS VY TYSCHENKO IE

Citation: Ga. Kachurin et al., NEUTRALIZATION OF BORON IN SILICON BY HIGH-TEMPERATURE BOMBARDMENT WITH ARGON IONS, Semiconductors, 28(3), 1994, pp. 313-316

Authors: ZHURAVLEV KS PRINTS VY LUBYSHEV DI SEMYAGIN BR MIGAL VP GILINSKII AM

Citation: Ks. Zhuravlev et al., ELECTRONIC-PROPERTIES OF GAAS BUFFER LAYERS GROWN BY MOLECULAR-BEAM EPITAXY AT GROWTH TEMPERATURES FROM 360-DEGREES-C TO 640-DEGREES-C, Semiconductors, 28(11), 1994, pp. 1067-1072

Authors: PRINTS VY PANAEV IA PREOBRAZHENSKII VV SEMYAGIN BR

Citation: Vy. Prints et al., HIGH-TEMPERATURE ANISOTROPY OF THE CONDUCTIVITY OF SUPERLATTICES OF GAAS QUANTUM WIRES GROWN ON FACETED 311A SURFACES, JETP letters, 60(3), 1994, pp. 217-220