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Results:
1-14
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Results: 14
Authors:
CURY LA
MATINAGA FM
FREIRE SLS
MOREIRA MVB
BEERENS J
PY MA
Citation: La. Cury et al., ELECTRON EFFECTIVE-MASS DETERMINATION IN ASYMMETRIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING INXGA1-XAS QUANTUM-WELLAND INAS-GAAS SUPERLATTICE CHANNELS, Superlattices and microstructures, 23(5), 1998, pp. 1019-1025
Authors:
GEORGESCU B
PY MA
SOUIFI A
POST G
GUILLOT G
Citation: B. Georgescu et al., NEW ASPECTS AND MECHANISM OF KINK EFFECT IN INALAS INGAAS/INP INVERTED HFETS/, IEEE electron device letters, 19(5), 1998, pp. 154-156
Authors:
PEIRO F
CORNET A
MORANTE JR
BECK M
PY MA
Citation: F. Peiro et al., SURFACE-ROUGHNESS IN INGAAS CHANNELS OF HIGH-ELECTRON-MOBILITY TRANSISTORS DEPENDING ON THE GROWTH TEMPERATURE - STRAIN-INDUCED OR DUE TO ALLOY DECOMPOSITION, Journal of applied physics, 83(12), 1998, pp. 7537-7541
Authors:
DURAN HC
REN L
BECK M
PY MA
ILEGEMS M
BACHTOLD W
Citation: Hc. Duran et al., LOW-FREQUENCY NOISE PROPERTIES OF SELECTIVELY DRY-ETCHED INP HEMTS, I.E.E.E. transactions on electron devices, 45(6), 1998, pp. 1219-1225
Authors:
CURY LA
MATINAGA FM
FREIRE SLS
MOREIRA MVB
BEERENS J
PY MA
Citation: La. Cury et al., CYCLOTRON-RESONANCE IN ASYMMETRIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING INXGA1-XAS QUANTUM-WELL AND INAS-GAAS SUPERLATTICE CHANNELS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1697-1702
Authors:
PEIRO F
FERRER JC
CORNET A
MORANTE JR
BECK M
PY MA
Citation: F. Peiro et al., WELL SURFACE-ROUGHNESS AND FAULT DENSITY EFFECTS ON THE HALL-MOBILITYOF INXGA1-XAS INYAL1-YAS/INP HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1715-1723
Authors:
PEIRO F
FERRER JC
CORNET A
MORANTE JR
BECK M
PY MA
Citation: F. Peiro et al., CORRELATION OF ELECTRICAL ANISOTROPIES OF HEMT DEVICES WITH DEFECT DISTRIBUTION AND INGAAS WELL ROUGHNESS, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 325-329
Authors:
MOREIRA MVB
DEOLIVEIRA AG
PY MA
Citation: Mvb. Moreira et al., PHOTO-HALL STUDIES OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH SHORT-PERIOD SUPERLATTICE CHANNELS RATHER THAN ALLOY CHANNELS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3350-3356
Authors:
MOREIRA MVB
DEOLIVEIRA AG
PY MA
Citation: Mvb. Moreira et al., REDUCTION OF THE EFFECTS OF INGAAS ALLOY DISORDER BY USING INAS GAAS SUPERLATTICES AS THE CONDUCTION CHANNEL IN MODULATION-DOPED HETEROSTRUCTURES/, Solid state communications, 97(1), 1996, pp. 11-15
Authors:
PY MA
BUEHLMANN HJ
Citation: Ma. Py et Hj. Buehlmann, EVIDENCE FOR SCREENING EFFECTS ON THE 1 F CURRENT NOISE IN GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS/, Journal of applied physics, 80(3), 1996, pp. 1583-1593
Authors:
MOREIRA MVB
DEOLIVEIRA AG
PY MA
Citation: Mvb. Moreira et al., HIGHER MOBILITY OF CHARGE-CARRIERS IN INAS GAAS SUPERLATTICES THROUGHTHE ELIMINATION OF INGAAS ALLOY DISORDERS ON GAAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2064-2068
Authors:
MOREIRA MVB
DEOLIVEIRA AG
PY MA
Citation: Mvb. Moreira et al., PHOTO-HALL STUDIES OF MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING (INAS)(M)(GAAS)(N) SUPERLATTICE CHANNELS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 391-395
Authors:
HADDAB Y
PY MA
BONARD JM
BUHLMANN HJ
ILEGEMS M
Citation: Y. Haddab et al., CAPACITANCE AND DRAIN CURRENT DEEP-LEVEL TRANSIENT SPECTROSCOPY MEASUREMENTS ON MOLECULAR-BEAM EPITAXY-GROWN GAAS IN0.25GA0.75AS/AL0.3GA0.7AS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Materials science and technology, 11(10), 1995, pp. 1079-1082
Authors:
HADDAB Y
PY MA
BUHLMANN HJ
ILEGEMS M
Citation: Y. Haddab et al., INVESTIGATION OF DX CENTERS IN MODULATION-DOPED FIELD-EFFECT TRANSISTOR-TYPE AL0.3GA0.7AS GAAS HETEROSTRUCTURES USING A FOURIER-TRANSFORM DEEP-LEVEL TRANSIENT SPECTROSCOPY SYSTEM/, Journal of electronic materials, 23(12), 1994, pp. 1343-1347
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