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Authors: AHN KH JEON YJ JEONG YH YUN CE PYO HM
Citation: Kh. Ahn et al., ENHANCED CURRENT-VOLTAGE CHARACTERISTICS OF AL0.25GA0.75AS IN(0.25)GA(0.75)AS/GAAS P-HEMT USING AN INVERTED DOUBLE-CHANNEL STRUCTURE/, JPN J A P 1, 37(3B), 1998, pp. 1377-1379
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