ACNP - Italian Periodicals Catalogue

AAAAAA

ITA
ENG

Results: 1-13 |

Results: 13

Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Authors: Sanchez, AM Pacheco, FJ Molina, SI Stemmer, J Aderhold, J Graul, J

Citation: Am. Sanchez et al., Structural characterization of high temperature AlN intermediate layer in GaN grown by molecular beam epitaxy, MAT SCI E B, 80(1-3), 2001, pp. 299-303

Critical thickness of high-temperature AlN interlayers in GaN on sapphire (0001)

Authors: Sanchez, AM Pacheco, FJ Molina, SI Stemmer, J Aderhold, J Graul, J

Citation: Am. Sanchez et al., Critical thickness of high-temperature AlN interlayers in GaN on sapphire (0001), J ELEC MAT, 30(5), 2001, pp. L17-L20

A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111)

Authors: Sanchez, AM Nouet, G Ruterana, P Pacheco, FJ Molina, SI Garcia, R

Citation: Am. Sanchez et al., A mechanism for the multiple atomic configurations of inversion domain boundaries in GaN layers grown on Si(111), APPL PHYS L, 79(22), 2001, pp. 3588-3590

Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy

Authors: Sanchez, AM Pacheco, FJ Molina, SI Garcia, R Ruterana, P Sanchez-Garcia, MA Calleja, E

Citation: Am. Sanchez et al., Inversion domains in GaN layers grown on (111) silicon by molecular-beam epitaxy, APPL PHYS L, 78(18), 2001, pp. 2688-2690

Si doping effect on the defect structure in GaN/AlN/Si(111) heteroepitaxial systems

Authors: Sanchez, AM Molina, SI Pacheco, FJ Garcia, R Sanchez-Garcia, MA Sanchez, FJ Calleja, E

Citation: Am. Sanchez et al., Si doping effect on the defect structure in GaN/AlN/Si(111) heteroepitaxial systems, B S ESP CER, 39(4), 2000, pp. 468-471

High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy

Authors: Stemmer, J Fedler, F Klausing, H Mistele, D Rotter, T Semchinova, O Aderhold, J Sanchez, AM Pacheco, FJ Molina, SI Fehrer, M Hommel, D Graul, J

Citation: J. Stemmer et al., High temperature AlN intermediate layer in GaN grown by molecular beam epitaxy, J CRYST GR, 216(1-4), 2000, pp. 15-20

Electron microscopy study of SiC obtained by the carbonization of Si(111)

Authors: Pacheco, FJ Sanchez, AM Molina, SI Araujo, D Devrajan, J Steckl, AJ Garcia, R

Citation: Fj. Pacheco et al., Electron microscopy study of SiC obtained by the carbonization of Si(111), THIN SOL FI, 344, 1999, pp. 305-308

Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111)

Authors: Molina, SI Sanchez, AM Pacheco, FJ Garcia, R Sanchez-Garcia, MA Calleja, E

Citation: Si. Molina et al., Influence of Si doping on the subgrain structure of GaN grown on AlN/Si(111), PHYS ST S-A, 176(1), 1999, pp. 401-406

Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE

Authors: Sanchez-Garcia, MA Naranjo, FB Pau, JL Jimenez, A Calleja, E Munoz, E Molina, SI Sanchez, AM Pacheco, FJ Garcia, R

Citation: Ma. Sanchez-garcia et al., Properties of homoepitaxial and heteroepitaxial GaN layers grown by plasma-assisted MBE, PHYS ST S-A, 176(1), 1999, pp. 447-452

Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties

Authors: Calleja, E Sanchez-Garcia, MA Sanchez, FJ Calle, F Naranjo, FB Munoz, E Molina, SI Sanchez, AM Pacheco, FJ Garcia, R

Citation: E. Calleja et al., Growth of III-nitrides on Si(111) by molecular beam epitaxy Doping, optical, and electrical properties, J CRYST GR, 202, 1999, pp. 296-317

MBE growth of GaN and AlGaN layers on Si(111) substrates: doping effects

Authors: Sanchez-Garcia, MA Calleja, E Naranjo, FB Sanchez, FJ Calle, F Munoz, E Sanchez, AM Pacheco, FJ Molina, SI

Citation: Ma. Sanchez-garcia et al., MBE growth of GaN and AlGaN layers on Si(111) substrates: doping effects, J CRYST GR, 202, 1999, pp. 415-418

The effect of Si doping on the defect structure of GaN/AlN/Si(111)

Authors: Molina, SI Sanchez, AM Pacheco, FJ Garcia, R Sanchez-Garcia, MA Sanchez, FJ Calleja, E

Citation: Si. Molina et al., The effect of Si doping on the defect structure of GaN/AlN/Si(111), APPL PHYS L, 74(22), 1999, pp. 3362-3364

Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs

Authors: Pacheco, FJ Araujo, D Molina, SI Garcia, R Sacedon, A Gonzalez-Sanz, F Calleja, E Kidd, P Lourenco, MA

Citation: Fj. Pacheco et al., Characterisation by TEM and X-ray diffraction of linearly graded composition InGaAs buffer layers on (001) GaAs, MATER SCI T, 14(12), 1998, pp. 1273-1278

Risultati: 1-13 |