Authors: Tokmoldin, SZ Mukashev, BN Abdullin, KA Gorelkinskii, YV Pajot, B

Citation: Sz. Tokmoldin et al., Comparison of electronic structure and properties of hydrogen-associated and thermal double donors in silicon, MAT SCI E B, 71, 2000, pp. 263-267

Authors: Pajot, B Clauws, P Lindstrom, JL Artacho, E

Citation: B. Pajot et al., O isotope effects and vibration-rotation lines of interstitial oxygen in germanium, PHYS REV B, 62(15), 2000, pp. 10165-10172

Authors: Pajot, B

Citation: B. Pajot, Electrical and optical properties of hydrogen-containing indium phosphide, OPTOEL PROP, 9, 2000, pp. 165-199

Authors: Lassmann, K Linsenmaier, C Maier, F Zeller, F Haller, EE Itoh, KM Khirunenko, LI Pajot, B Mussig, H

Citation: K. Lassmann et al., Isotopic shifts of the low-energy excitations of interstitial oxygen in germanium, PHYSICA B, 263, 1999, pp. 384-387

Authors: Pajot, B Clerjaud, B Xu, ZJ

Citation: B. Pajot et al., High-frequency hydrogen-related infrared modes in silicon grown in a hydrogen atmosphere, PHYS REV B, 59(11), 1999, pp. 7500-7506