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Results: 1-8 |
Results: 8
Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions
Authors: Palau, JM Hubert, G Coulie, K Sagnes, B Calvet, MC Fourtine, S
Citation: Jm. Palau et al., Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions, IEEE NUCL S, 48(2), 2001, pp. 225-231
Incidence of multi-particle events on soft error rates caused by n-Si nuclear reactions
Authors: Wrobel, F Palau, JM Calvet, MC Bersillon, O Duarte, H
Citation: F. Wrobel et al., Incidence of multi-particle events on soft error rates caused by n-Si nuclear reactions, IEEE NUCL S, 47(6), 2000, pp. 2580-2585
Study of basic mechanisms induced by an ionizing particle on simple structures
Authors: Hubert, G Palau, JM Roche, P Sagnes, B Gasiot, J Calvet, MC
Citation: G. Hubert et al., Study of basic mechanisms induced by an ionizing particle on simple structures, IEEE NUCL S, 47(3), 2000, pp. 519-526
Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations
Authors: Roche, P Palau, JM Bruguier, G Tavernier, C Ecoffet, R Gasiot, J
Citation: P. Roche et al., Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations, IEEE NUCL S, 46(6), 1999, pp. 1354-1362
Threshold LET for SEU induced by low energy ions
Authors: McNulty, PJ Roche, P Palau, JM Gasiot, J
Citation: Pj. Mcnulty et al., Threshold LET for SEU induced by low energy ions, IEEE NUCL S, 46(6), 1999, pp. 1370-1377
Cell design modifications to harden a N-channel power IGBT against Single Event Latchup
Authors: Lorfevre, E Sagnes, B Bruguier, G Palau, JM Gasiot, J Calvet, MC Ecoffet, R
Citation: E. Lorfevre et al., Cell design modifications to harden a N-channel power IGBT against Single Event Latchup, IEEE NUCL S, 46(6), 1999, pp. 1410-1414
SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain
Authors: Roche, P Palau, JM Belhaddad, K Bruguier, G Ecoffet, R Gasiot, J
Citation: P. Roche et al., SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain, IEEE NUCL S, 45(6), 1998, pp. 2534-2543
A new approach for the prediction of the neutron-induced SEU rate
Authors: Vial, C Palau, JM Gasiot, J Calvet, MC Fourtine, S
Citation: C. Vial et al., A new approach for the prediction of the neutron-induced SEU rate, IEEE NUCL S, 45(6), 1998, pp. 2915-2920
Risultati: 1-8 |