Authors:
Palau, JM
Hubert, G
Coulie, K
Sagnes, B
Calvet, MC
Fourtine, S
Citation: Jm. Palau et al., Device simulation study of the SEU sensitivity of SRAMs to internal ion tracks generated by nuclear reactions, IEEE NUCL S, 48(2), 2001, pp. 225-231
Authors:
Wrobel, F
Palau, JM
Calvet, MC
Bersillon, O
Duarte, H
Citation: F. Wrobel et al., Incidence of multi-particle events on soft error rates caused by n-Si nuclear reactions, IEEE NUCL S, 47(6), 2000, pp. 2580-2585
Authors:
Roche, P
Palau, JM
Bruguier, G
Tavernier, C
Ecoffet, R
Gasiot, J
Citation: P. Roche et al., Determination of key parameters for SEU occurrence using 3-D full cell SRAM simulations, IEEE NUCL S, 46(6), 1999, pp. 1354-1362
Authors:
Lorfevre, E
Sagnes, B
Bruguier, G
Palau, JM
Gasiot, J
Calvet, MC
Ecoffet, R
Citation: E. Lorfevre et al., Cell design modifications to harden a N-channel power IGBT against Single Event Latchup, IEEE NUCL S, 46(6), 1999, pp. 1410-1414
Authors:
Roche, P
Palau, JM
Belhaddad, K
Bruguier, G
Ecoffet, R
Gasiot, J
Citation: P. Roche et al., SEU response of an entire SRAM cell simulated as one contiguous three dimensional device domain, IEEE NUCL S, 45(6), 1998, pp. 2534-2543