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Results: 1-9 |
Results: 9
Verification of distortion in the microstructure of GaN detected by EXAFS using ab initio density functional theory calculations
Authors: Dimakis, N Bunker, G Katsikini, M Paloura, EC
Citation: N. Dimakis et al., Verification of distortion in the microstructure of GaN detected by EXAFS using ab initio density functional theory calculations, J SYNCHROTR, 8, 2001, pp. 258-260
Study of group-III binary and ternary nitrides using X-ray absorption finestructure measurements
Authors: Katsikini, M Paloura, EC Antonopoulos, J Bressler, P Moustakas, TD
Citation: M. Katsikini et al., Study of group-III binary and ternary nitrides using X-ray absorption finestructure measurements, J CRYST GR, 230(3-4), 2001, pp. 405-409
Ion implantation effects on the microhardness and microstructure of GaN
Authors: Kavouras, P Katsikini, M Vouroutzis, N Lioutas, CB Paloura, EC Antonopoulos, J Karakostas, T
Citation: P. Kavouras et al., Ion implantation effects on the microhardness and microstructure of GaN, J CRYST GR, 230(3-4), 2001, pp. 454-458
On the effect of ion implantation in the microstructure of GaN: an XAFS study
Authors: Katsikini, M Bollmann, J Masselink, WT Paloura, EC
Citation: M. Katsikini et al., On the effect of ion implantation in the microstructure of GaN: an XAFS study, J SYNCHROTR, 6, 1999, pp. 552-554
Nitrogen K-edge EXAFS measurements on Mg- and Si-doped GaN
Authors: Katsikini, M Moustakas, TD Paloura, EC
Citation: M. Katsikini et al., Nitrogen K-edge EXAFS measurements on Mg- and Si-doped GaN, J SYNCHROTR, 6, 1999, pp. 555-557
Nitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides
Authors: Katsikini, M Fieber-Erdmann, M Holub-Krappe, E Korakakis, D Moustakas, TD Paloura, EC
Citation: M. Katsikini et al., Nitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides, J SYNCHROTR, 6, 1999, pp. 558-560
Gallium K-edge EXAFS measurements on cubic and hexagonal GaN
Authors: Katsikini, M Rossner, H Fieber-Erdmann, M Holub-Krappe, E Moustakas, TD Paloura, EC
Citation: M. Katsikini et al., Gallium K-edge EXAFS measurements on cubic and hexagonal GaN, J SYNCHROTR, 6, 1999, pp. 561-563
Nitrogen K-edge X-ray absorption measurements on N- and O-implanted GaN
Authors: Katsikini, M Paloura, EC Bollmann, J Holub-Krappe, E Masselink, WT
Citation: M. Katsikini et al., Nitrogen K-edge X-ray absorption measurements on N- and O-implanted GaN, J ELEC SPEC, 103, 1999, pp. 689-694
Nitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides
Authors: Katsikini, M Paloura, EC Fieber-Erdmam, M Holub-Krappe, E Korakakis, D Moustakas, TD
Citation: M. Katsikini et al., Nitrogen K-edge NEXAFS measurements on group-III binary and ternary nitrides, J ELEC SPEC, 103, 1999, pp. 695-699
Risultati: 1-9 |