Authors: Beitel, G Wendt, H Fritsch, E Weinrich, V Engelhardt, M Hasler, B Rohr, T Bergmann, R Scheler, U Malek, KH Nagel, N Gschwandtner, A Pamler, W Honlein, W Dehm, C Mazure, C

Citation: G. Beitel et al., A novel low-temperature (Ba,Sr)TiO3 (BST) process with Ti/TiN barrier for Gbit DRAM applications, MICROEL ENG, 48(1-4), 1999, pp. 299-302