Authors:
Mochizuki, K
Welty, RJ
Asbeck, PM
Lutz, CR
Welser, RE
Whitney, SJ
Pan, NR
Citation: K. Mochizuki et al., GaInP/GaAs collector-up tunneling-collector heterojunction bipolar transistors (C-up TC-HBTs): Optimization of fabrication process and epitaxial layer structure for high-efficiency high-power amplifiers, IEEE DEVICE, 47(12), 2000, pp. 2277-2283