Authors: Savolainen, P Toivonen, M Orsila, S Saarinen, M Melanen, P Vilokkinen, V Dumitrescu, M Panarello, T Pessa, M

Citation: P. Savolainen et al., AlGaInAs/InP strained-layer quantum well lasers at 1.3 mu m grown by solidsource molecular beam epitaxy, J ELEC MAT, 28(8), 1999, pp. 980-985