Authors: Park, BE Ishiwara, H

Citation: Be. Park et H. Ishiwara, Fabrication of PZT films on Si substrates by sol-gel method using Y2O3 buffer layers, INTEGR FERR, 33(1-4), 2001, pp. 109-116

Authors: Lee, BK Kwon, HM Hong, BK Park, BE Suh, SH Cho, MT Lee, CS Kim, MC Kim, CJ Yoo, SS Kim, HS

Citation: Bk. Lee et al., Hemodynamic effects on atherosclerosis-prone coronary artery: Wall shear stress/rate distribution and impedance phase angle in coronary and aortic circulation, YONSEI MED, 42(4), 2001, pp. 375-383

Authors: Park, BE Ishiwara, H

Citation: Be. Park et H. Ishiwara, Electrical properties of LaAlO3/Si and Sr0.8Bi2.2Ta2O9/LaAlO3/Si structures, APPL PHYS L, 79(6), 2001, pp. 806-808

Authors: Sarinanto, MM Imada, S Shoriki, S Park, BE Tokumitsu, E Ishiwara, H

Citation: Mm. Sarinanto et al., TEM observation of ferroelectric films grown on silicon using Y2O3 buffer layer, INTEGR FERR, 27(1-4), 1999, pp. 1125-1135

Authors: Park, CH Kim, YK Park, BE Lee, WG Cho, JS

Citation: Ch. Park et al., Effects of MgO annealing process in a vacuum on the discharge characteristics of AC PDP, MAT SCI E B, 60(2), 1999, pp. 149-155