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Results:
1-7
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Results: 7
Authors:
Pasquariello, D
Camacho, M
Ericsson, F
Hjort, K
Citation: D. Pasquariello et al., Crystalline defects in InP-to-silicon direct wafer bonding, JPN J A P 1, 40(8), 2001, pp. 4837-4844
Authors:
Pasquariello, D
Camacho, M
Hjort, K
Dozsa, L
Szentpali, B
Citation: D. Pasquariello et al., Evaluation of InP-to-silicon heterobonding, MAT SCI E B, 80(1-3), 2001, pp. 134-137
Authors:
Muller, A
Iordanescu, S
Petrini, I
Avramescu, V
Simion, G
Vasilache, D
Badilita, V
Dascalu, D
Konstantinidis, G
Marcelli, R
Bartolucci, G
Hjort, K
Pasquariello, D
Citation: A. Muller et al., Polyimide based GaAs micromachined millimeter wave structures, J MICROM M, 10(2), 2000, pp. 130-135
Authors:
Pasquariello, D
Lindeberg, M
Hedlund, C
Hjort, K
Citation: D. Pasquariello et al., Surface energy as a function of self-bias voltage in oxygen plasma wafer bonding, SENS ACTU-A, 82(1-3), 2000, pp. 239-244
Authors:
Pasquariello, D
Hedlund, C
Hjort, K
Citation: D. Pasquariello et al., Oxidation and induced damage in oxygen plasma in situ wafer bonding, J ELCHEM SO, 147(7), 2000, pp. 2699-2703
Authors:
Pasquariello, D
Hjort, K
Citation: D. Pasquariello et K. Hjort, Mesa-spacers: Enabling nondestructive measurement of surface energy in room temperature wafer bonding, J ELCHEM SO, 147(6), 2000, pp. 2343-2346
Authors:
Chitica, N
Daleiden, J
Bentell, J
Andre, J
Strassner, M
Greek, S
Pasquariello, D
Karlsson, M
Gupta, R
Hjort, K
Citation: N. Chitica et al., Fabrication of tunable InP/air-gap Fabry-Perot cavities by selective etching of InGaAs sacrificial layers, PHYS SCR, T79, 1999, pp. 131-134
Risultati:
1-7
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