Citation: R. Passler, Dispersion-related assessments of temperature dependences for the fundamental band gap of hexagonal GaN, J APPL PHYS, 90(8), 2001, pp. 3956-3964
Citation: R. Passler, Temperature dependence of fundamental band gaps in group IV, III-V, and II-VI materials via a two-oscillator model, J APPL PHYS, 89(11), 2001, pp. 6235-6240
Citation: R. Passler, Moderate phonon dispersion shown by the temperature dependence of fundamental band gaps of various elemental and binary semiconductors including wide-band gap materials, J APPL PHYS, 88(5), 2000, pp. 2570-2577
Citation: R. Passler, Parameter sets due to fittings of the temperature dependencies of fundamental bandgaps in semiconductors, PHYS ST S-B, 216(2), 1999, pp. 975-1007
Authors:
Passler, R
Griebl, E
Riepl, H
Lautner, G
Bauer, S
Preis, H
Gebhardt, W
Buda, B
As, DJ
Schikora, D
Lischka, K
Papagelis, K
Ves, S
Citation: R. Passler et al., Temperature dependence of exciton peak energies in ZnS, ZnSe, and ZnTe epitaxial films, J APPL PHYS, 86(8), 1999, pp. 4403-4411