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Citation: Y. Fu et al., Designing nanometre silicon-on-insulator MOSFET with buried Si1-xGex quantum well channel, PHYSICA E, 9(4), 2001, pp. 694-700

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Citation: Mya. Yousif et al., Direct assessment of relaxation and defect propagation in different as-grown and in situ post-growth annealed thin Ge/Si and step-graded Si1-xGex/Si buffer layers, SOL ST ELEC, 45(11), 2001, pp. 1869-1874

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Citation: O. Nur et al., Characterization of strain relaxation in low-defect-density thin single and step-graded germanium buffer layers by high-resolution two-dimensional x-ray diffraction mapping, SEMIC SCI T, 15(7), 2000, pp. L25-L30