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Results: 1-25 | 26-30 |
Results: 26-30/30
Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots
Authors: Yakimov, AI Dvurechenskii, AV Proskuryakov, YY Nikiforov, AI Pchelyakov, OP Teys, SA Gutakovskii, AK
Citation: Ai. Yakimov et al., Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots, APPL PHYS L, 75(10), 1999, pp. 1413-1415
Influence of the step height of the vicinal surface of germanium on the formation of antiphase boundaries in a gallium-arsenide-germanium-gallium-arsenide(001) system
Authors: Gutakovskii, AK Katkov, AV Katkov, MI Pchelyakov, OP Revenko, MA
Citation: Ak. Gutakovskii et al., Influence of the step height of the vicinal surface of germanium on the formation of antiphase boundaries in a gallium-arsenide-germanium-gallium-arsenide(001) system, TECH PHYS L, 24(12), 1998, pp. 949-951
RHEED investigation of limiting thickness epitaxy during low-temperature Si-MBE on (100) surface
Authors: Nikiforov, AI Kanter, BZ Pchelyakov, OP
Citation: Ai. Nikiforov et al., RHEED investigation of limiting thickness epitaxy during low-temperature Si-MBE on (100) surface, THIN SOL FI, 336(1-2), 1998, pp. 179-182
The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface
Authors: Nikiforov, AI Markov, VA Cherepanov, VA Pchelyakov, OP
Citation: Ai. Nikiforov et al., The influence of growth temperature on the period of RHEED oscillations during MBE of Si and Ge on Si(111) surface, THIN SOL FI, 336(1-2), 1998, pp. 183-187
Formation of zero-dimensional hole states in Ge/Si heterostructures probedwith capacitance spectroscopy
Authors: Yakimov, AI Dvurechenskii, AV Nikiforov, AI Pchelyakov, OP
Citation: Ai. Yakimov et al., Formation of zero-dimensional hole states in Ge/Si heterostructures probedwith capacitance spectroscopy, THIN SOL FI, 336(1-2), 1998, pp. 332-335
Risultati: 1-25 | 26-30 |