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Results:
1-3
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Results: 3
Precise electrical evaluation of active oxides thickness and comparison with TEM measurements
Authors:
Pellizzer, F Pavia, G
Citation:
F. Pellizzer et G. Pavia, Precise electrical evaluation of active oxides thickness and comparison with TEM measurements, J NON-CRYST, 280(1-3), 2001, pp. 235-240
A new model of gate capacitance as a simple tool to extract MOS parameters
Authors:
Larcher, L Pavan, P Pellizzer, F Ghidini, G
Citation:
L. Larcher et al., A new model of gate capacitance as a simple tool to extract MOS parameters, IEEE DEVICE, 48(5), 2001, pp. 935-945
Thin oxide reliability and gettering efficiency in advanced silicon substrates
Authors:
Polignano, ML Ghidini, G Cazzaniga, F Ceresara, L Illuzzi, F Padovani, B Pellizzer, F
Citation:
Ml. Polignano et al., Thin oxide reliability and gettering efficiency in advanced silicon substrates, MAT SCI E B, 73(1-3), 2000, pp. 99-105
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