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Citation: F. Pellizzer et G. Pavia, Precise electrical evaluation of active oxides thickness and comparison with TEM measurements, J NON-CRYST, 280(1-3), 2001, pp. 235-240

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Citation: L. Larcher et al., A new model of gate capacitance as a simple tool to extract MOS parameters, IEEE DEVICE, 48(5), 2001, pp. 935-945

Authors: Polignano, ML Ghidini, G Cazzaniga, F Ceresara, L Illuzzi, F Padovani, B Pellizzer, F

Citation: Ml. Polignano et al., Thin oxide reliability and gettering efficiency in advanced silicon substrates, MAT SCI E B, 73(1-3), 2000, pp. 99-105