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Results: 1-11 |
Results: 11
Commercial production of QWIP wafers by molecular beam epitaxy
Authors: Fastenau, JM Liu, WK Fang, XM Lubyshev, DI Pelzel, RI Yurasits, TR Stewart, TR Lee, JH Li, SS Tidrow, MZ
Citation: Jm. Fastenau et al., Commercial production of QWIP wafers by molecular beam epitaxy, INFR PHYS T, 42(3-5), 2001, pp. 407-415
Deformation behavior of coherently strained InAs/GaAs(111) A heteroepitaxial systems: Theoretical calculations and experimental measurements
Authors: Zepeda-Ruiz, LA Pelzel, RI Nosho, BZ Weinberg, WH Maroudas, D
Citation: La. Zepeda-ruiz et al., Deformation behavior of coherently strained InAs/GaAs(111) A heteroepitaxial systems: Theoretical calculations and experimental measurements, J APPL PHYS, 90(6), 2001, pp. 2689-2698
Adsorption of [(Bu-t)GaS](4) on the GaAs(001)-(4 x 2) surface
Authors: Pelzel, RI Nosho, BZ Fimland, BO Weinberg, WH
Citation: Ri. Pelzel et al., Adsorption of [(Bu-t)GaS](4) on the GaAs(001)-(4 x 2) surface, SURF SCI, 470(1-2), 2000, pp. L81-L87
Effects of buffer layer thickness and film compositional grading on strainrelaxation kinetics in InAs/GaAs(111)A heteroepitaxy
Authors: Pelzel, RI Zepeda-Ruiz, LA Weinberg, WH Maroudas, D
Citation: Ri. Pelzel et al., Effects of buffer layer thickness and film compositional grading on strainrelaxation kinetics in InAs/GaAs(111)A heteroepitaxy, SURF SCI, 463(2), 2000, pp. L634-L640
Growth of GaS on GaAs(100)-(4 x 2) with the single-source precursor [(Bu-t)GaS](4)
Authors: Hopcus, AB Yi, SI Chung, CH Pelzel, RI Weinberg, WH
Citation: Ab. Hopcus et al., Growth of GaS on GaAs(100)-(4 x 2) with the single-source precursor [(Bu-t)GaS](4), SURF SCI, 446(1-2), 2000, pp. 55-62
Interfacial stability and structure in InAs/GaAs(111)A heteroepitaxy: Effects of buffer layer thickness and film compositional grading
Authors: Zepeda-Ruiz, LA Pelzel, RI Weinberg, WH Maroudas, D
Citation: La. Zepeda-ruiz et al., Interfacial stability and structure in InAs/GaAs(111)A heteroepitaxy: Effects of buffer layer thickness and film compositional grading, APPL PHYS L, 77(21), 2000, pp. 3352-3354
Mechanical behavior of thin buffer layers in InAs/GaAs(111)A heteroepitaxy
Authors: Pelzel, RI Zepeda-Ruiz, LA Nosho, BZ Li, YL Weinberg, WH Maroudas, D
Citation: Ri. Pelzel et al., Mechanical behavior of thin buffer layers in InAs/GaAs(111)A heteroepitaxy, APPL PHYS L, 76(21), 2000, pp. 3017-3019
Kinetics of strain relaxation through misfit dislocation formation in InAs/GaAs(111)A heteroepitaxy
Authors: Zepeda-Ruiz, LA Nosho, BZ Pelzel, RI Weinberg, WH Maroudas, D
Citation: La. Zepeda-ruiz et al., Kinetics of strain relaxation through misfit dislocation formation in InAs/GaAs(111)A heteroepitaxy, SURF SCI, 441(2-3), 1999, pp. L911-L916
Adsorption of [(Bu-t)GaS](4) on GaAs(001)-(2 x 4)
Authors: Pelzel, RI Nosho, BZ Fimland, BO Weinberg, WH
Citation: Ri. Pelzel et al., Adsorption of [(Bu-t)GaS](4) on GaAs(001)-(2 x 4), SURF SCI, 426(2), 1999, pp. 163-172
Surface morphology in InAs/GaAs(111)A heteroepitaxy: Experimental measurements and computer simulations
Authors: Nosho, BZ Zepeda-Ruiz, LA Pelzel, RI Weinberg, WH Maroudas, D
Citation: Bz. Nosho et al., Surface morphology in InAs/GaAs(111)A heteroepitaxy: Experimental measurements and computer simulations, APPL PHYS L, 75(6), 1999, pp. 829-831
Effect of initial surface reconstruction on the GaS/GaAs(001) interface
Authors: Pelzel, RI Nosho, BZ Shoenfeld, WV Lundstrom, T Petroff, PM Weinberg, WH
Citation: Ri. Pelzel et al., Effect of initial surface reconstruction on the GaS/GaAs(001) interface, APPL PHYS L, 75(21), 1999, pp. 3354-3356
Risultati: 1-11 |