Authors: Chung, HYA Pelzmann, A Drechsler, M Scherer, M Schwegler, V Seyboth, M Kirchner, C Kamp, M

Citation: Hya. Chung et al., Multiple-step annealing for 50% enhanced p-conductivity of GaN, J CRYST GR, 230(3-4), 2001, pp. 549-553

Authors: Scherer, M Schwegler, V Seyboth, M Kirchner, C Kamp, M Pelzmann, A Drechsler, M

Citation: M. Scherer et al., Low resistive p-type GaN using two-step rapid thermal annealing processes, J APPL PHYS, 89(12), 2001, pp. 8339-8341

Authors: Mayer, M Pelzmann, A Chung, HY Kamp, M Ebeling, KJ

Citation: M. Mayer et al., Reactive MBE of group III nitrides: high-quality homoepitaxial GaN and ultra-violet light-emitting diodes, J CRYST GR, 202, 1999, pp. 318-322

Authors: Prystawko, P Leszczynski, M Sliwinski, A Teisseyre, H Suski, T Bockowski, M Porowski, S Domagala, J Kirchner, C Pelzmann, A Schauler, M Kamp, M

Citation: P. Prystawko et al., Epitaxy of ternary nitrides on GaN single crystals, J CRYST GR, 199, 1999, pp. 1061-1065

Authors: Schauler, M Eberhard, F Kirchner, C Schwegler, V Pelzmann, A Kamp, M Ebeling, KJ Bertram, F Riemann, T Christen, J Prystawko, P Leszczynski, M Grzegory, I Porowski, S

Citation: M. Schauler et al., Dry etching of GaN substrates for high-quality homoepitaxy, APPL PHYS L, 74(8), 1999, pp. 1123-1125