Authors:
Mayer, M
Pelzmann, A
Chung, HY
Kamp, M
Ebeling, KJ
Citation: M. Mayer et al., Reactive MBE of group III nitrides: high-quality homoepitaxial GaN and ultra-violet light-emitting diodes, J CRYST GR, 202, 1999, pp. 318-322
Authors:
Prystawko, P
Leszczynski, M
Sliwinski, A
Teisseyre, H
Suski, T
Bockowski, M
Porowski, S
Domagala, J
Kirchner, C
Pelzmann, A
Schauler, M
Kamp, M
Citation: P. Prystawko et al., Epitaxy of ternary nitrides on GaN single crystals, J CRYST GR, 199, 1999, pp. 1061-1065
Authors:
Schauler, M
Eberhard, F
Kirchner, C
Schwegler, V
Pelzmann, A
Kamp, M
Ebeling, KJ
Bertram, F
Riemann, T
Christen, J
Prystawko, P
Leszczynski, M
Grzegory, I
Porowski, S
Citation: M. Schauler et al., Dry etching of GaN substrates for high-quality homoepitaxy, APPL PHYS L, 74(8), 1999, pp. 1123-1125