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Citation: E. Skuras et al., Molecular-beam epitaxy growth of InGaAs-InAlAs high electron mobility transistors with enhanced electron densities and measurement of InAlAs surface potential, J VAC SCI B, 19(4), 2001, pp. 1524-1528

Authors: Chowdhury, S Skuras, E Emeleus, CJ Long, AR Davies, JH Pennelli, G Stanley, CR

Citation: S. Chowdhury et al., Switching of guiding center-drift direction in asymmetric two-dimensional lateral surface superlattices - art. no. 153306, PHYS REV B, 6315(15), 2001, pp. 3306

Authors: Chowdhury, S Emeleus, CJ Milton, B Skuras, E Long, AR Davies, JH Pennelli, G Stanley, CR

Citation: S. Chowdhury et al., Importance of symmetry breaking in two-dimensional lateral-surface superlattices, PHYS REV B, 62(8), 2000, pp. R4821-R4824

Authors: Walker, AC Desmulliez, MPY Forbes, MG Fancey, SJ Buller, GS Taghizadeh, MR Dines, JAB Stanley, CR Pennelli, G Boyd, AR Horan, P Byrne, D Hegarty, J Eitel, S Gauggel, HP Gulden, KH Gauthier, A Benabes, P Gutzwiller, JL Goetz, M

Citation: Ac. Walker et al., Design and construction of an optoelectronic crossbar switch containing a terabit per second free-space optical interconnect, IEEE S T QU, 5(2), 1999, pp. 236-249

Authors: Trusso, S Vasi, C Allegrini, M Fuso, F Pennelli, G

Citation: S. Trusso et al., Micro-Raman study of free-standing porous silicon samples, J VAC SCI B, 17(2), 1999, pp. 468-473

Authors: Pennelli, G

Citation: G. Pennelli, Conduction of metal-isolator-semiconductor structures with granular silicon thin films, THIN SOL FI, 348(1-2), 1999, pp. 157-164