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Results: 1-25 | 26-29
Results: 1-25/29
The role of internal electric fields in III-N quantum structure
Authors: Perlin, P Lepkowski, SP Teisseyre, H Suski, T
Citation: P. Perlin et al., The role of internal electric fields in III-N quantum structure, ACT PHY P A, 100(2), 2001, pp. 261-270
Influence of pressure on the optical properties of InxGa1-xN epilayers andquantum structures - art. no. 115319
Authors: Perlin, P Gorczyca, I Suski, T Wisniewski, P Lepkowski, S Christensen, NE Svane, A Hansen, M DenBaars, SP Damilano, B Grandjean, N Massies, J
Citation: P. Perlin et al., Influence of pressure on the optical properties of InxGa1-xN epilayers andquantum structures - art. no. 115319, PHYS REV B, 6411(11), 2001, pp. 5319
III-N ternary epi-layers grown on the GaN bulk crystals
Authors: Leszczynski, M Prystawko, P Czernecki, R Lehnert, J Suski, T Perlin, P Wisniewski, P Grzegory, I Nowak, G Porowski, S Albrecht, M
Citation: M. Leszczynski et al., III-N ternary epi-layers grown on the GaN bulk crystals, J CRYST GR, 231(3), 2001, pp. 352-356
Optical and electrical properties of Be doped GaN bulk crystals
Authors: Suski, T Litwin-Staszewska, E Perlin, P Wisniewski, P Teisseyre, H Grzegory, I Bockowski, M Porowski, S Saarinen, K Nissila, J
Citation: T. Suski et al., Optical and electrical properties of Be doped GaN bulk crystals, J CRYST GR, 230(3-4), 2001, pp. 368-371
Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals
Authors: Frayssinet, E Knap, W Krukowski, S Perlin, P Wisniewski, P Suski, T Grzegory, I Porowski, S
Citation: E. Frayssinet et al., Evidence of free carrier concentration gradient along the c-axis for undoped GaN single crystals, J CRYST GR, 230(3-4), 2001, pp. 442-447
Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells
Authors: Lepkowski, SP Teisseyre, H Suski, T Perlin, P Grandjean, N Massies, J
Citation: Sp. Lepkowski et al., Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells, APPL PHYS L, 79(10), 2001, pp. 1483-1485
Picosecond Z-scan measurements on bulk GaN crystals
Authors: Pacebutas, V Stalnionis, A Krotkus, A Suski, T Perlin, P Leszczynski, M
Citation: V. Pacebutas et al., Picosecond Z-scan measurements on bulk GaN crystals, APPL PHYS L, 78(26), 2001, pp. 4118-4120
Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN
Authors: Jursenas, S Kurilcik, N Kurilcik, G Zukauskas, A Prystawko, P Leszcynski, M Suski, T Perlin, P Grzegory, I Porowski, S
Citation: S. Jursenas et al., Decay of stimulated and spontaneous emission in highly excited homoepitaxial GaN, APPL PHYS L, 78(24), 2001, pp. 3776-3778
Pressure studies of band structure, defects and impurities in group III nitrides
Authors: Perlin, P Suski, T Skierbiszewski, C Wisniewski, P
Citation: P. Perlin et al., Pressure studies of band structure, defects and impurities in group III nitrides, HIGH PR RES, 18(1-6), 2000, pp. 21-28
The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure
Authors: Teisseyre, H Ochalski, TJ Perlin, P Suski, T Leszczynski, M Grzegory, I Bockowski, M Lucznik, B Bugajski, M Palczewska, M Gebicki, W
Citation: H. Teisseyre et al., The influence of erbium on the physical properties of GaN crystals grown from N solution in Ga at high nitrogen pressure, HIGH PR RES, 18(1-6), 2000, pp. 35-39
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
Authors: Shapiro, NA Kim, Y Feick, H Weber, ER Perlin, P Yang, JW Akasaki, I Amano, H
Citation: Na. Shapiro et al., Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain, PHYS REV B, 62(24), 2000, pp. R16318-R16321
Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies
Authors: Teisseyre, H Suski, T Perlin, P Grzegory, I Leszczynski, M Bockowski, M Porowski, S Freitas, JA Henry, RL Wickenden, AE Koleske, DD
Citation: H. Teisseyre et al., Different character of the donor-acceptor pair-related 3.27 eV band and blue photoluminescence in Mg-doped GaN. Hydrostatic pressure studies, PHYS REV B, 62(15), 2000, pp. 10151-10157
GaN thin films by growth on Ga-rich GaN buffer layers
Authors: Kim, Y Subramanya, SG Siegle, H Kruger, J Perlin, P Weber, ER Ruvimov, S Liliental-Weber, Z
Citation: Y. Kim et al., GaN thin films by growth on Ga-rich GaN buffer layers, J APPL PHYS, 88(10), 2000, pp. 6032-6036
Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x
Authors: Skierbiszewski, C Perlin, P Wisniewski, P Knap, W Suski, T Walukiewicz, W Shan, W Yu, KM Ager, JW Haller, EE Geisz, JF Olson, JM
Citation: C. Skierbiszewski et al., Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x, APPL PHYS L, 76(17), 2000, pp. 2409-2411
Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01
Authors: Perlin, P Wisniewski, P Skierbiszewski, C Suski, T Kaminska, E Subramanya, SG Weber, ER Mars, DE Walukiewicz, W
Citation: P. Perlin et al., Interband optical absorption in free standing layer of Ga0.96In0.04As0.99N0.01, APPL PHYS L, 76(10), 2000, pp. 1279-1281
Growth of 1.3 mu m InGaAsN laser material on GaAs by molecular beam epitaxy
Authors: Mars, DE Babic, DI Kaneko, Y Chang, YL Subramanya, S Kruger, J Perlin, P Weber, ER
Citation: De. Mars et al., Growth of 1.3 mu m InGaAsN laser material on GaAs by molecular beam epitaxy, J VAC SCI B, 17(3), 1999, pp. 1272-1275
Selective excitation of the yellow luminescence of GaN
Authors: Colton, JS Yu, PY Teo, KL Perlin, P Weber, ER Grzegory, I Uchida, K
Citation: Js. Colton et al., Selective excitation of the yellow luminescence of GaN, PHYSICA B, 274, 1999, pp. 75-79
Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys
Authors: Skierbiszewski, C Perlin, P Wisniewski, P Suski, T Walukiewicz, W Shan, W Ager, JW Haller, EE Geisz, JF Friedman, DJ Olson, JM Kurtz, SR
Citation: C. Skierbiszewski et al., Effect of nitrogen-induced modification of the conduction band structure on electron transport in GaAsN alloys, PHYS ST S-B, 216(1), 1999, pp. 135-139
Pressure studies of defects and impurities in nitrides
Authors: Suski, T Perlin, P Skierbiszewski, C Wisniewski, P Dmowski, L Leszczynski, M Walukiewicz, W
Citation: T. Suski et al., Pressure studies of defects and impurities in nitrides, PHYS ST S-B, 216(1), 1999, pp. 521-528
Electrical properties of GaN bulk single crystals doped with Mg
Authors: Litwin-Staszewska, E Suski, T Grzegory, I Porowski, S Perlin, P Robert, JL Contreras, S Wasik, D Witowski, A Cote, D Clerjaud, B
Citation: E. Litwin-staszewska et al., Electrical properties of GaN bulk single crystals doped with Mg, PHYS ST S-B, 216(1), 1999, pp. 567-570
Transverse effective charge and its pressure dependence in GaN single crystals
Authors: Perlin, P Suski, T Ager, JW Conti, G Polian, A Christensen, NE Gorczyca, I Grzegory, I Weber, ER Haller, EE
Citation: P. Perlin et al., Transverse effective charge and its pressure dependence in GaN single crystals, PHYS REV B, 60(3), 1999, pp. 1480-1483
(GaMg)N - New wide band gap semiconductor
Authors: Suski, T Perlin, P Pietraszko, A Leszczynski, M Bockowski, M Grzegory, I Porowski, S
Citation: T. Suski et al., (GaMg)N - New wide band gap semiconductor, PHYS ST S-A, 176(1), 1999, pp. 343-346
Single-quantum well InGaN green light emitting diode degradation under high electrical stress
Authors: Barton, DL Osinski, M Perlin, P Eliseev, PG Lee, J
Citation: Dl. Barton et al., Single-quantum well InGaN green light emitting diode degradation under high electrical stress, MICROEL REL, 39(8), 1999, pp. 1219-1227
(GaMg)N new semiconductor grown at high pressure of nitrogen
Authors: Suski, T Perlin, P Pietraszko, A Leszczynski, M Bockowski, M Grzegory, I Porowski, S
Citation: T. Suski et al., (GaMg)N new semiconductor grown at high pressure of nitrogen, J CRYST GR, 207(1-2), 1999, pp. 27-29
Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate
Authors: Perlin, P Mattos, L Shapiro, NA Kruger, J Wong, WS Sands, T Cheung, NW Weber, ER
Citation: P. Perlin et al., Reduction of the energy gap pressure coefficient of GaN due to the constraining presence of the sapphire substrate, J APPL PHYS, 85(4), 1999, pp. 2385-2389
Risultati: 1-25 | 26-29