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Results: 1-11 |
Results: 11
Very-low-temperature molecular beam epitaxial growth of GaP/AlAs heterostructures for distributed Bragg reflector applications
Authors: Pickrell, GW Chang, KL Lin, HC Hsieh, KC Cheng, KY
Citation: Gw. Pickrell et al., Very-low-temperature molecular beam epitaxial growth of GaP/AlAs heterostructures for distributed Bragg reflector applications, J VAC SCI B, 19(4), 2001, pp. 1536-1540
Self-assembled GaInAs quantum wire heterostructure design for temperature stabilized emission wavelength
Authors: Wohlert, DE Pickrell, GW Chang, KL Hsieh, KC Cheng, KY
Citation: De. Wohlert et al., Self-assembled GaInAs quantum wire heterostructure design for temperature stabilized emission wavelength, J CRYST GR, 227, 2001, pp. 985-989
Strain dependence on barrier material and its effect on the temperature stability of photoluminescence wavelength in self-assembled GaInAs quantum wires
Authors: Wohlert, DE Change, KL Pickrell, GW Hsieh, KC Cheng, KY
Citation: De. Wohlert et al., Strain dependence on barrier material and its effect on the temperature stability of photoluminescence wavelength in self-assembled GaInAs quantum wires, J APPL PHYS, 90(11), 2001, pp. 5623-5626
Microstructure and wet oxidation of low-temperature-grown amorphous (Al/Ga,As)
Authors: Chang, KL Pickrell, GW Wohlert, DE Epple, JH Lin, HC Cheng, KY Hsieh, KC
Citation: Kl. Chang et al., Microstructure and wet oxidation of low-temperature-grown amorphous (Al/Ga,As), J APPL PHYS, 89(1), 2001, pp. 747-752
Fabrication of GaP/Al-oxide distributed Bragg reflectors for the visible spectrum
Authors: Pickrell, GW Lin, HC Chang, KL Hsieh, KC Cheng, KY
Citation: Gw. Pickrell et al., Fabrication of GaP/Al-oxide distributed Bragg reflectors for the visible spectrum, APPL PHYS L, 78(8), 2001, pp. 1044-1046
Growth of low-defect density Ino(0.25)Gao(0.75)As on GaAs by molecular beam epitaxy
Authors: Pickrell, GW Chang, KL Epple, JH Cheng, KY Hsieh, KC
Citation: Gw. Pickrell et al., Growth of low-defect density Ino(0.25)Gao(0.75)As on GaAs by molecular beam epitaxy, J VAC SCI B, 18(6), 2000, pp. 2611-2614
Strain relaxation and defect reduction in InxGa1-xAs/GaAs by lateral oxidation of an underlying AlGaAs layer
Authors: Chang, KL Epple, JH Pickrell, GW Lin, HC Cheng, KY Hsieh, KC
Citation: Kl. Chang et al., Strain relaxation and defect reduction in InxGa1-xAs/GaAs by lateral oxidation of an underlying AlGaAs layer, J APPL PHYS, 88(11), 2000, pp. 6922-6924
Thermal wet oxidation of GaP and Al0.4Ga0.6P
Authors: Epple, JH Chang, KL Pickrell, GW Cheng, KY Hsieh, KC
Citation: Jh. Epple et al., Thermal wet oxidation of GaP and Al0.4Ga0.6P, APPL PHYS L, 77(8), 2000, pp. 1161-1163
Improvement of wet-oxidized AlxGa1-xAs (x similar to 1) through the use ofAlAs/GaAs digital alloys
Authors: Pickrell, GW Epple, JH Chang, KL Hsieh, KC Cheng, KY
Citation: Gw. Pickrell et al., Improvement of wet-oxidized AlxGa1-xAs (x similar to 1) through the use ofAlAs/GaAs digital alloys, APPL PHYS L, 76(18), 2000, pp. 2544-2546
Formation of amorphous native oxides by very-low-temperature molecular beam epitaxy and water vapor oxidation
Authors: Chang, KL Chou, LJ Hsieh, KC Wohlert, DE Pickrell, GW Cheng, KY
Citation: Kl. Chang et al., Formation of amorphous native oxides by very-low-temperature molecular beam epitaxy and water vapor oxidation, J CRYST GR, 202, 1999, pp. 633-637
Fabrication of a substrate-independent aluminum oxide-GaAs distributed Bragg reflector
Authors: Wohlert, DE Lin, HC Chang, KL Pickrell, GW Epple, JH Hsieh, KC Cheng, KY
Citation: De. Wohlert et al., Fabrication of a substrate-independent aluminum oxide-GaAs distributed Bragg reflector, APPL PHYS L, 75(10), 1999, pp. 1371-1373
Risultati: 1-11 |