Authors: Zaknoune, M Schuler, O Piotrowicz, S Mollot, F Theron, D Crosnier, Y

Citation: M. Zaknoune et al., High-power V-band Ga0.51In0.49P/In0.2Ga0.8As pseudomorphic HEMT grown by gas source molecular beam epitaxy, IEEE MICR G, 9(1), 1999, pp. 28-30

Authors: Gaquiere, C Bourcier, E Piotrowicz, S Crosnier, Y

Citation: C. Gaquiere et al., High power added efficiency at 35GHz on InP DH HEMTs, ELECTR LETT, 34(25), 1998, pp. 2438-2439