Authors: Dvorak, MW Bolognesi, CR Pitts, OJ Watkins, SP

Citation: Mw. Dvorak et al., 300 GHz InP/GaAsSb/InP double HBTs with high current capability and BVCEO >= 6 V, IEEE ELEC D, 22(8), 2001, pp. 361-363

Authors: Pitts, OJ Watkins, SP Wang, CX Stotz, JAH Thewalt, MLW

Citation: Oj. Pitts et al., In-situ monitoring, structural, and optical properties of ultrathin GaSb/GaAs quantum wells grown by OMVPE, J ELEC MAT, 30(11), 2001, pp. 1412-1416

Authors: Wiersma, R Stotz, JAH Pitts, OJ Wang, CX Thewalt, MLW Watkins, SP

Citation: R. Wiersma et al., P-type carbon doping of GaSb, J ELEC MAT, 30(11), 2001, pp. 1429-1432

Authors: Fink, V Chevalier, E Pitts, OJ Dvorak, MW Kavanagh, KL Bolognesi, CR Watkins, SP Hummel, S Moll, N

Citation: V. Fink et al., Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb, APPL PHYS L, 79(15), 2001, pp. 2384-2386

Authors: Watkins, SP Pitts, OJ Dale, C Xu, XG Dvorak, MW Matine, N Bolognesi, CR

Citation: Sp. Watkins et al., Heavily carbon-doped GaAsSb grown on InP for HBT applications, J CRYST GR, 221, 2000, pp. 59-65