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Citation: J. Brown et al., Temperature dependent photoluminescence of MBE grown gallium nitride quantum dots, PHYS ST S-B, 228(1), 2001, pp. 199-202

Authors: Elsass, CR Poblenz, C Heying, B Fini, P Petroff, PM DenBaars, SP Mishra, UK Speck, JS

Citation: Cr. Elsass et al., Influence of Ga flux on the growth and electron transport properties of AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, J CRYST GR, 233(4), 2001, pp. 709-716

Authors: Elsass, CR Smorchkova, IP Ben, HY Haus, E Poblenz, C Fini, P Maranowski, K Petroff, PM DenBaars, SP Mishra, UK Speck, JS Saxler, A Elhamri, S Mitchel, WC

Citation: Cr. Elsass et al., Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy, JPN J A P 2, 39(10B), 2000, pp. L1023-L1025

Authors: Elsass, CR Mates, T Heying, B Poblenz, C Fini, P Petroff, PM DenBaars, SP Speck, JS

Citation: Cr. Elsass et al., Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy, APPL PHYS L, 77(20), 2000, pp. 3167-3169

Authors: Heying, B Smorchkova, I Poblenz, C Elsass, C Fini, P Den Baars, S Mishra, U Speck, JS

Citation: B. Heying et al., Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy, APPL PHYS L, 77(18), 2000, pp. 2885-2887