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Results:
1-7
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Results: 7
Authors:
Andreev, AV
Asadchikov, VE
Artyukov, IA
Vinogradov, AV
Zruev, VN
Kas'yanov, YS
Kondratenko, VV
Levashov, VE
Mchedlishvili, BV
Ponomarev, YV
Popov, AV
Postnov, AA
Savel'ev, SV
Senin, RA
Struk, II
Citation: Av. Andreev et al., X-ray microscopy of track membranes and biological objects in the soft- and hard-wavelength ranges, CRYSTALLO R, 46(4), 2001, pp. 596-600
Authors:
Andreev, AV
Asadchikov, VE
Mchedlishvili, BV
Ponomarev, YV
Postnov, AA
Senin, RA
Tsyganova, TV
Citation: Av. Andreev et al., X-ray microscopy with asymmetrical reflection from a single crystal, JETP LETTER, 73(4), 2001, pp. 184-187
Authors:
Lander, RJP
Ponomarev, YV
van Berkum, JGM
de Boer, WB
Citation: Rjp. Lander et al., High hole mobilities in fully-strained Si1-xGex layers (0.3 < x < 0.4) andtheir significance for SiGe pMOSFET performance, IEEE DEVICE, 48(8), 2001, pp. 1826-1832
Authors:
Lander, RJP
Ponomarev, YV
van Berkum, JGM
de Boer, WB
Loo, R
Caymax, M
Citation: Rjp. Lander et al., Drift mobilities and Hall scattering factors of holes in ultrathin Si1-xGex layers (0.3 < x < 0.4) grown on Si, J APPL PHYS, 88(4), 2000, pp. 2016-2023
Authors:
Ponomarev, YV
Stolk, PA
Dachs, CJJ
Montree, AH
Citation: Yv. Ponomarev et al., A 0.13 mu m poly-SiGe gate CMOS technology for low-voltage mixed-signal applications, IEEE DEVICE, 47(7), 2000, pp. 1507-1513
Authors:
Ponomarev, YV
Stolk, PA
Salm, C
Schmitz, J
Woerlee, PH
Citation: Yv. Ponomarev et al., High-performance deep submicron CMOS technologies with polycrystalline-SiGe gates, IEEE DEVICE, 47(4), 2000, pp. 848-855
Authors:
Stolk, PA
Ponomarev, YV
Schmitz, J
van Brandenburg, ACMC
Roes, R
Montree, AH
Woerlee, PH
Citation: Pa. Stolk et al., Dopant profile engineering of advanced Si MOSFET's using ion implantation, NUCL INST B, 148(1-4), 1999, pp. 242-246
Risultati:
1-7
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