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Results: 26-32/32
Authors:
Bender, H
Jin, S
Poortmans, J
Stalmans, L
Citation: H. Bender et al., Morphological properties of porous-Si layers for n(+)-emitter applications, APPL SURF S, 147(1-4), 1999, pp. 187-200
Authors:
Pinter, I
Abdulhadi, AH
Makaro, Z
Khanh, NQ
Adam, M
Barsony, I
Poortmans, J
Sivoththaman, S
Song, HZ
Adriaenssens, GJ
Citation: I. Pinter et al., Plasma immersion ion implantation for shallow junctions in silicon, APPL SURF S, 139, 1999, pp. 224-227
Authors:
Said, K
Poortmans, J
Caymax, M
Loo, R
Daami, A
Bremond, G
Kruger, O
Kittler, M
Citation: K. Said et al., High quality, relaxed SiGe epitaxial layers for solar cell application, THIN SOL FI, 337(1-2), 1999, pp. 85-89
Authors:
Nijs, JF
Szlufcik, J
Poortmans, J
Sivoththaman, S
Mertens, RP
Citation: Jf. Nijs et al., Advanced manufacturing concepts for crystalline silicon solar cells, IEEE DEVICE, 46(10), 1999, pp. 1948-1969
Authors:
Said, K
Poortmans, J
Caymax, M
Nijs, JF
Debarge, L
Christoffel, E
Slaoui, A
Citation: K. Said et al., Design, fabrication, and analysis of crystalline Si-SiGe heterostructure thin-film solar cells, IEEE DEVICE, 46(10), 1999, pp. 2103-2110
Authors:
Ghannam, MY
Poortmans, J
Nijs, JF
Citation: My. Ghannam et al., Quantitative comparison between the performance of buried contact and of screenprinted contact industrial silicon solar cells, KUWAIT J S, 25(2), 1998, pp. 363-377
Authors:
Daami, A
Bremond, G
Stalmans, L
Poortmans, J
Citation: A. Daami et al., Efficient luminescence from porous silicon, J LUMINESC, 80(1-4), 1998, pp. 169-172