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Results: 1-8 |
Results: 8
Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluation
Authors: Karecki, S Chatterjee, R Pruette, L Reif, R Vartanian, V Sparks, T Beu, L Novoselov, K
Citation: S. Karecki et al., Characterization of iodoheptafluoropropane as a dielectric etchant. I. Process performance evaluation, J VAC SCI B, 19(4), 2001, pp. 1269-1292
Characterization of iodoheptafluoropropane as a dielectric etchant. II. Wafer surface analysis
Authors: Karecki, S Chatterjee, R Pruette, L Reif, R Vartanian, V Sparks, T Lee, JJ Beu, L Miller, C
Citation: S. Karecki et al., Characterization of iodoheptafluoropropane as a dielectric etchant. II. Wafer surface analysis, J VAC SCI B, 19(4), 2001, pp. 1293-1305
Characterization of iodoheptafluoropropane as a dielectric etchant. III. Effluent analysis
Authors: Karecki, S Chatterjee, R Pruette, L Reif, R Vartanian, V Sparks, T Beu, L
Citation: S. Karecki et al., Characterization of iodoheptafluoropropane as a dielectric etchant. III. Effluent analysis, J VAC SCI B, 19(4), 2001, pp. 1306-1318
Evaluation of oxalyl fluoride for a dielectric etch application in an inductively coupled plasma etch tool
Authors: Karecki, S Chatterjee, R Pruette, L Reif, R Sparks, T Beu, L Vartanian, V Novoselov, M
Citation: S. Karecki et al., Evaluation of oxalyl fluoride for a dielectric etch application in an inductively coupled plasma etch tool, J ELCHEM SO, 148(3), 2001, pp. G141-G149
Evaluation of pentafluoroethane and 1,1-diffuoroethane for a dielectric etch application in an inductively coupled plasma etch tool
Authors: Karecki, S Chatterjee, R Pruette, L Reif, R Sparks, T Beu, L Vartanian, V
Citation: S. Karecki et al., Evaluation of pentafluoroethane and 1,1-diffuoroethane for a dielectric etch application in an inductively coupled plasma etch tool, JPN J A P 1, 39(7B), 2000, pp. 4666-4686
High density plasma oxide etching using nitrogen trifluoride and acetylene
Authors: Pruette, L Karecki, S Chatterjee, R Reif, R Sparks, T Vartanian, V
Citation: L. Pruette et al., High density plasma oxide etching using nitrogen trifluoride and acetylene, J VAC SCI A, 18(6), 2000, pp. 2749-2758
Evaluation of C4F8O as an alternative plasma-enhanced chemical vapor deposition chamber clean chemistry
Authors: Pruette, L Karecki, S Reif, R Tousignant, L Reagan, W Kesari, S Zazzera, L
Citation: L. Pruette et al., Evaluation of C4F8O as an alternative plasma-enhanced chemical vapor deposition chamber clean chemistry, J ELCHEM SO, 147(3), 2000, pp. 1149-1153
Evaluation of a dilute nitrogen trifluoride plasma clean in a dielectric PECVD reactor
Authors: Pruette, L Karecki, S Reif, R Entley, W Langan, J Hazari, V Hines, C
Citation: L. Pruette et al., Evaluation of a dilute nitrogen trifluoride plasma clean in a dielectric PECVD reactor, EL SOLID ST, 2(11), 1999, pp. 592-594
Risultati: 1-8 |