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Results: 1-10 |
Results: 10
Measurement of the in-depth stress profile in hydrogenated microcrystalline silicon thin films using Raman spectrometry
Authors: Paillard, V Puech, P Sirvin, R Hamma, S Cabarrocas, PRI
Citation: V. Paillard et al., Measurement of the in-depth stress profile in hydrogenated microcrystalline silicon thin films using Raman spectrometry, J APPL PHYS, 90(7), 2001, pp. 3276-3279
Non-stoichiometry in (001) low temperature GaAs by Raman spectroscopy
Authors: Puech, P Toufella, M Carles, R Sirvin, R Bedel, E Fontaine, C Stellmacher, M Bisaro, R Nagle, J Claverie, A Benassayag, G
Citation: P. Puech et al., Non-stoichiometry in (001) low temperature GaAs by Raman spectroscopy, J PHYS-COND, 12(13), 2000, pp. 2895-2902
Mapping the three-dimensional strain field around a microindentation on silicon using polishing and Raman spectroscopy
Authors: Puech, P Pinel, S Jasinevicius, RG Pizani, PS
Citation: P. Puech et al., Mapping the three-dimensional strain field around a microindentation on silicon using polishing and Raman spectroscopy, J APPL PHYS, 88(8), 2000, pp. 4582-4585
Rythmology group from the SFC. A 30 years historic evocation.
Authors: Puech, P Slama, R
Citation: P. Puech et R. Slama, Rythmology group from the SFC. A 30 years historic evocation., ARCH MAL C, 93(2), 2000, pp. 117-120
Anharmonic frequency shift of long-wavelength phonons in As and Sb
Authors: Pizani, PS Campos, CEM Puech, P
Citation: Ps. Pizani et al., Anharmonic frequency shift of long-wavelength phonons in As and Sb, APPL PHYS L, 77(18), 2000, pp. 2924-2925
Structure of mixed-phase LPCVD silicon films as a function of operating conditions
Authors: de Mauduit, B Bourgerette, C Paillard, V Puech, P Caussat, B
Citation: B. De Mauduit et al., Structure of mixed-phase LPCVD silicon films as a function of operating conditions, J PHYS IV, 9(P8), 1999, pp. 1091-1098
Improved characterization of polycrystalline silicon film, by resonant Raman scattering
Authors: Paillard, V Puech, P Temple-Boyer, P Caussat, B Scheid, E Couderc, JP de Mauduit, B
Citation: V. Paillard et al., Improved characterization of polycrystalline silicon film, by resonant Raman scattering, THIN SOL FI, 337(1-2), 1999, pp. 93-97
Improved one-phonon confinement model for an accurate size determination of silicon nanocrystals
Authors: Paillard, V Puech, P Laguna, MA Carles, R Kohn, B Huisken, F
Citation: V. Paillard et al., Improved one-phonon confinement model for an accurate size determination of silicon nanocrystals, J APPL PHYS, 86(4), 1999, pp. 1921-1924
Diameter of As clusters in LT-GaAs by Raman spectroscopy
Authors: Toufella, M Puech, P Carles, R Bedel, E Fontaine, C Claverie, A Benassayag, G
Citation: M. Toufella et al., Diameter of As clusters in LT-GaAs by Raman spectroscopy, J APPL PHYS, 85(5), 1999, pp. 2929-2933
Mechanical lapping, handling and transfer of ultra-thin wafers
Authors: Pinel, S Tasselli, J Bailbe, JP Marty, A Puech, P Esteve, D
Citation: S. Pinel et al., Mechanical lapping, handling and transfer of ultra-thin wafers, J MICROM M, 8(4), 1998, pp. 338-342
Risultati: 1-10 |