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Results: 1-7 |
Results: 7
Theory of H- in SiO2
Authors: Edwards, AH Shedd, WM Pugh, RD
Citation: Ah. Edwards et al., Theory of H- in SiO2, J NON-CRYST, 289(1-3), 2001, pp. 42-52
Microscopic mechanisms of electron trapping by self-trapped holes and protons in amorphous SiO2
Authors: Karna, SP Kurtz, HA Shedd, WM Pugh, RD
Citation: Sp. Karna et al., Microscopic mechanisms of electron trapping by self-trapped holes and protons in amorphous SiO2, IEEE NUCL S, 47(6), 2000, pp. 2311-2315
Electronic structure theory and mechanisms of the oxide trapped hole annealing process
Authors: Karna, SP Pineda, AC Pugh, RD Shedd, WM Oldham, TR
Citation: Sp. Karna et al., Electronic structure theory and mechanisms of the oxide trapped hole annealing process, IEEE NUCL S, 47(6), 2000, pp. 2316-2321
Interaction of H+/H-0 with O atoms in thin SiO2 films: a first-principles quantum mechanical study
Authors: Karna, SP Pugh, RD Shedd, WM Singaraju, BBK
Citation: Sp. Karna et al., Interaction of H+/H-0 with O atoms in thin SiO2 films: a first-principles quantum mechanical study, J NON-CRYST, 254, 1999, pp. 66-73
New fundamental defects in a-SiO2
Authors: Karna, SP Kurtz, HA Shedd, WM Pugh, RD Singaraju, BK
Citation: Sp. Karna et al., New fundamental defects in a-SiO2, IEEE NUCL S, 46(6), 1999, pp. 1544-1552
The effect of near-interface network strain on proton trapping in SiO2
Authors: Vanheusden, K Korambath, PP Kurtz, HA Karna, SP Fleetwood, DM Shedd, WM Pugh, RD
Citation: K. Vanheusden et al., The effect of near-interface network strain on proton trapping in SiO2, IEEE NUCL S, 46(6), 1999, pp. 1562-1567
Microscopic mechanisms of radiation-induced proton density decay in SiO2 films
Authors: Karna, SP Pugh, RD Chavez, JR Shedd, W Brothers, CP Singaraju, BK Vitiello, M Pacchioni, G Devine, RA
Citation: Sp. Karna et al., Microscopic mechanisms of radiation-induced proton density decay in SiO2 films, IEEE NUCL S, 45(6), 1998, pp. 2408-2412
Risultati: 1-7 |