Authors: Polyakov, AY Smirnov, NB Govorkov, AV Usikov, AS Shmidt, NM Pushnyi, BV Tsvetkov, DV Stepanov, SI Dmitriev, VA Mil'vidskii, MG Pavlov, VF

Citation: Ay. Polyakov et al., Deep centers and persistent photoconductivity studies in variously grown GaN films, MRS I J N S, 5, 2000, pp. NIL_798-NIL_803

Authors: Usikov, AS Tret'yakov, VV Bobyl', AV Kyutt, RN Lundin, WV Pushnyi, BV Shmidt, NM

Citation: As. Usikov et al., Internal microstrain and distribution of composition and cathodoluminescence over lapped Al(x)Ga(1-x)Nepilayers on sapphire, SEMICONDUCT, 34(11), 2000, pp. 1248-1254

Authors: Usikov, AS Tret'yakov, VV Lundin, VV Zadiranov, YM Pushnyi, BV Konnikov, SG

Citation: As. Usikov et al., Investigation of the growth characteristics of epitaxial GaN layers on sapphire by microcathodoluminescence, TECH PHYS L, 25(4), 1999, pp. 253-256

Authors: Shmidt, NM Lebedev, AV Lundin, WV Pushnyi, BV Ratnikov, VV Shubina, TV Tsatsul'nikov, AA Usikov, AS Pozina, G Monemar, B

Citation: Nm. Shmidt et al., Effect of Si doping on structural, photoluminescence and electrical properties of GaN, MAT SCI E B, 59(1-3), 1999, pp. 195-197

Authors: Polyakov, AY Smirnov, NB Govorkov, AV Mil'vidskii, MG Usikov, AS Pushnyi, BV Lundin, WV

Citation: Ay. Polyakov et al., Deep centers in AlGaN-based light emitting diode structures, SOL ST ELEC, 43(10), 1999, pp. 1929-1936