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Results: 3
Sidewall oxidation behavior of dichlorosilane-based W-polycide gate
Authors:
Kim, HS Lee, SM Yeo, IS Lee, SD Pyi, SH
Citation:
Hs. Kim et al., Sidewall oxidation behavior of dichlorosilane-based W-polycide gate, J VAC SCI B, 19(2), 2001, pp. 361-365
Roles of sidewall oxidation in the devices with shallow trench isolation
Authors:
Pyi, SH Yeo, IS Weon, DH Kim, YB Kim, HS Lee, SK
Citation:
Sh. Pyi et al., Roles of sidewall oxidation in the devices with shallow trench isolation, IEEE ELEC D, 20(8), 1999, pp. 384-386
Influence of crystal originated particles on gate oxide integrity of metal-oxide-semiconductor capacitors with shallow trench isolation
Authors:
Koh, CG Yeo, IS Pyi, SH Lee, SK
Citation:
Cg. Koh et al., Influence of crystal originated particles on gate oxide integrity of metal-oxide-semiconductor capacitors with shallow trench isolation, J KOR PHYS, 35, 1999, pp. S1038-S1042
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