ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-40 |

Results: 26-40/40

Electroluminescence from semitransparent au film/nanometer SiO2/nanometer Si/nanometer SiO2/n(+)-Si structure under reverse bias

Authors: Heng, CL Sun, YK Wang, ST Chen, Y Qiao, YP Zhang, BR Ma, ZC Zong, WH Qin, GG

Citation: Cl. Heng et al., Electroluminescence from semitransparent au film/nanometer SiO2/nanometer Si/nanometer SiO2/n(+)-Si structure under reverse bias, APPL PHYS L, 77(10), 2000, pp. 1416-1418

Optical absorption and photoluminescence studies of free-standing porous silicon films with high porosities

Authors: Xu, DS Guo, GL Gui, LL Tang, YQ Zhang, BR Qin, GG

Citation: Ds. Xu et al., Optical absorption and photoluminescence studies of free-standing porous silicon films with high porosities, J PHYS CH B, 103(26), 1999, pp. 5468-5471

Preparation of Tb3+-ion-doped Si-based light-emitting materials with sol-gel method

Authors: Xie, DT Wu, JG Ma, G Yan, WF Zhou, WJ Xu, GX Xu, DF Tao, J Qin, GG

Citation: Dt. Xie et al., Preparation of Tb3+-ion-doped Si-based light-emitting materials with sol-gel method, ACT PHY C E, 48(9), 1999, pp. 1773-1780

Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices

Authors: Heng, CL Zhang, BR Qiao, YP Ma, ZC Zong, WH Qin, GG

Citation: Cl. Heng et al., Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices, PHYSICA B, 270(1-2), 1999, pp. 104-109

Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure

Authors: Wang, YQ Zhao, TP Cui, XM Ma, ZC Zong, WH Qin, GG

Citation: Yq. Wang et al., Electroluminescence from indium tin oxide film/nanoscale Si oxide/p-Si structure, CHIN PHYS L, 16(8), 1999, pp. 605-607

A comparative study of electroluminescence from nanosize Si particle embedded silicon oxide films and that from nanosize Ge particle embedded siliconoxide films

Authors: Qin, GG Bai, GF Li, AP Ma, SY Sun, YK Zhang, BR Ma, ZC Zong, WH

Citation: Gg. Qin et al., A comparative study of electroluminescence from nanosize Si particle embedded silicon oxide films and that from nanosize Ge particle embedded siliconoxide films, THIN SOL FI, 338(1-2), 1999, pp. 131-135

Optical properties and luminescence mechanism of oxidized free-standing porous silicon films

Authors: Xu, DS Guo, GL Gui, LL Tang, YQ Zhang, BR Qin, GG

Citation: Ds. Xu et al., Optical properties and luminescence mechanism of oxidized free-standing porous silicon films, J APPL PHYS, 86(4), 1999, pp. 2066-2072

Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN

Authors: Sun, WH Chen, KM Yang, ZJ Li, J Tong, YZ Jin, SX Zhang, GY Zhang, QL Qin, GG

Citation: Wh. Sun et al., Using Fourier transform infrared grazing incidence reflectivity to study local vibrational modes in GaN, J APPL PHYS, 85(9), 1999, pp. 6430-6433

Theory for photoluminescence from SiO2 films containing Si nanocrystals and Er ions

Authors: Qin, G Qin, GG Wang, SH

Citation: G. Qin et al., Theory for photoluminescence from SiO2 films containing Si nanocrystals and Er ions, J APPL PHYS, 85(9), 1999, pp. 6738-6745

Electrical characteristics for solid C-60/GaN heterojunctions

Authors: Chen, KM Sun, WH Wu, K Li, CY Qin, GG Zhang, QL Zhou, XH Gu, ZN

Citation: Km. Chen et al., Electrical characteristics for solid C-60/GaN heterojunctions, J APPL PHYS, 85(9), 1999, pp. 6935-6937

Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si

Authors: Qin, GG Heng, CL Bai, GF Wu, K Li, CY Ma, ZC Zong, WH You, LP

Citation: Gg. Qin et al., Electroluminescence from Au/(nanoscale Ge/nanoscale SiO2) superlattices/p-Si, APPL PHYS L, 75(23), 1999, pp. 3629-3631

Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure

Authors: Wang, YQ Zhao, TP Liu, J Qin, GG

Citation: Yq. Wang et al., Near-ultraviolet and near-infrared electroluminescence from an indium-tin-oxide film native Si oxide/p-Si structure, APPL PHYS L, 74(25), 1999, pp. 3815-3817

Synchronized swinging of electroluminescence intensity and peak wavelengthwith Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures

Authors: Qin, GG Wang, YQ Qiao, YP Zhang, BR Ma, ZC Zong, WH

Citation: Gg. Qin et al., Synchronized swinging of electroluminescence intensity and peak wavelengthwith Si layer thickness in Au/SiO2/nanometer Si/SiO2/p-Si structures, APPL PHYS L, 74(15), 1999, pp. 2182-2184

Preparation and characterization of freestanding porous silicon films withhigh porosities

Authors: Xu, DS Guo, GL Gui, LL Tang, YQ Zhang, BR Qin, GG

Citation: Ds. Xu et al., Preparation and characterization of freestanding porous silicon films withhigh porosities, EL SOLID ST, 1(5), 1998, pp. 227-229

Extended quantum confinement luminescence center model for photoluminescence from oxidized porous silicon and nanometer-Si-particle- or nanometer-Ge-particle-embedded silicon oxide films

Authors: Qin, GG

Citation: Gg. Qin, Extended quantum confinement luminescence center model for photoluminescence from oxidized porous silicon and nanometer-Si-particle- or nanometer-Ge-particle-embedded silicon oxide films, MATER RES B, 33(12), 1998, pp. 1857-1866

Risultati: 1-25 | 26-40 |