Citation: S. Raghavan, GIBBS ENERGY OF FORMATION OF LA2CUO4 USING A CALCIUM-FLUORIDE SOLID-ELECTROLYTE GALVANIC CELL, Journal of alloys and compounds, 232(1-2), 1996, pp. 20-21
Authors:
DEGASPERI R
SOSA MAG
PATARCA R
BATISTINI S
LAMOREUX MR
RAGHAVAN S
KOWALL NW
SMITH KH
FLETCHER MA
KOLODNY EH
Citation: R. Degasperi et al., INTRATHECAL SYNTHESIS OF ANTI-SULFATIDE IGG IS ASSOCIATED WITH PERIPHERAL-NERVE DISEASE IN ACQUIRED-IMMUNODEFICIENCY-SYNDROME, AIDS research and human retroviruses, 12(3), 1996, pp. 205-211
Authors:
RAGHAVAN S
KENKRE VM
BISHOP AR
SALKOLA MI
Citation: S. Raghavan et al., VALIDITY OF THE DISCRETE NONLINEAR SCHRODINGER-EQUATION IN THE CONTEXT OF THE FLUORESCENCE DEPOLARIZATION OF A SPIN-BOSON SYSTEM, Physical review. B, Condensed matter, 53(13), 1996, pp. 8457-8463
Authors:
DEGASPERI R
SOSA MAG
BATTISTINI S
YERETSIAN J
RAGHAVAN S
ZELNIK N
LESHINSKY E
KOLODNY EH
Citation: R. Degasperi et al., LATE-ONSET G(M2) GANGLIOSIDOSIS - ASHKENAZI JEWISH FAMILY WITH AN EXON-5 MUTATION (TYR(180)-]HIS) IN THE HEX-A ALPHA-CHAIN GENE, Neurology, 47(2), 1996, pp. 547-552
Authors:
JEON JS
RAGHAVAN S
PARKS HG
LOWELL JK
ALI I
Citation: Js. Jeon et al., ELECTROCHEMICAL INVESTIGATION OF COPPER CONTAMINATION ON SILICON-WAFERS FROM HF SOLUTIONS, Journal of the Electrochemical Society, 143(9), 1996, pp. 2870-2875
Citation: Ea. Kneer et al., ELECTROCHEMISTRY OF CHEMICAL-VAPOR-DEPOSITED TUNGSTEN FILMS WITH RELEVANCE TO CHEMICAL-MECHANICAL POLISHING, Journal of the Electrochemical Society, 143(12), 1996, pp. 4095-4100
Citation: Js. Jeon et al., EFFECT OF TEMPERATURE ON THE INTERACTION OF SILICON WITH NONIONIC SURFACTANTS IN ALKALINE-SOLUTIONS, Journal of the Electrochemical Society, 143(1), 1996, pp. 277-283
Authors:
LINK JT
RAGHAVAN S
GALLANT M
DANISHEFSKY SJ
CHOU TC
BALLAS LM
Citation: Jt. Link et al., STAUROSPORINE AND ENT-STAUROSPORINE - THE FIRST TOTAL SYNTHESES, PROSPECTS FOR A REGIOSELECTIVE APPROACH, AND ACTIVITY PROFILES, Journal of the American Chemical Society, 118(12), 1996, pp. 2825-2842
Citation: Ks. Ghosh et S. Raghavan, FUSION POINT DIAGRAM OF NA2SO4-NAVO3-NACL SYSTEM, Transactions of the Indian Institute of Metals, 48(5), 1995, pp. 401-408
Authors:
LARSEN G
LOTERO E
PARRA RD
PETKOVIC LM
SILVA HS
RAGHAVAN S
Citation: G. Larsen et al., CHARACTERIZATION OF PALLADIUM SUPPORTED ON SULFATED ZIRCONIA CATALYSTS BY DRIFTS, XAS AND N-BUTANE ISOMERIZATION REACTION IN THE PRESENCE OF HYDROGEN, Applied catalysis. A, General, 130(2), 1995, pp. 213-226
Authors:
FRITSCH DS
CHANEY EL
BOXWALA A
MCAULIFFE MJ
RAGHAVAN S
THALL A
EARNHART JRD
Citation: Ds. Fritsch et al., CORE-BASED PORTAL IMAGE REGISTRATION FOR AUTOMATIC RADIOTHERAPY TREATMENT VERIFICATION, International journal of radiation oncology, biology, physics, 33(5), 1995, pp. 1287-1300
Authors:
BRAHMACHARI SK
MEERA G
SARKAR PS
BALAGURUMOORTHY P
TRIPATHI J
RAGHAVAN S
SHALIGRAM U
PATASKAR S
Citation: Sk. Brahmachari et al., SIMPLE REPETITIVE SEQUENCES IN THE GENOME - STRUCTURE AND FUNCTIONAL-SIGNIFICANCE, Electrophoresis, 16(9), 1995, pp. 1705-1714
Authors:
SALKOLA MI
BISHOP AR
KENKRE VM
RAGHAVAN S
Citation: Mi. Salkola et al., COUPLED QUASI-PARTICLE-BOSON SYSTEMS - THE SEMICLASSICAL APPROXIMATION AND DISCRETE NONLINEAR SCHRODINGER-EQUATION, Physical review. B, Condensed matter, 52(6), 1995, pp. 3824-3827
Citation: Js. Jeon et al., BEHAVIOR OF POLYETHYLENE OXIDE-BASED NONIONIC SURFACTANTS IN SILICON PROCESSING USING ALKALINE-SOLUTIONS, Journal of the Electrochemical Society, 142(2), 1995, pp. 621-627
Authors:
YONESHIGE KK
PARKS HG
RAGHAVAN S
HISKEY JB
RESNICK PJ
Citation: Kk. Yoneshige et al., DEPOSITION OF COPPER FROM A BUFFERED OXIDE ETCHANT ONTO SILICON-WAFERS, Journal of the Electrochemical Society, 142(2), 1995, pp. 671-676
Citation: Rp. Sperline et al., FT-IR ATR ANALYSIS OF THE SILICON/AQUEOUS SOLUTION INTERFACE USING SPUTTERED SILICON THIN-FILMS TO ACCESS THE 1550-1100 CM(-1) SPECTRAL REGION/, Applied spectroscopy, 49(8), 1995, pp. 1178-1182
Citation: S. Raghavan, STANDARD GIBBS ENERGY OF FORMATION OF LANIO3 USING A CALCIUM-FLUORIDESOLID-ELECTROLYTE GALVANIC CELL, Transactions of the Indian Institute of Metals, 47(2-3), 1994, pp. 197-198