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ANTONOV VN
JEPSEN O
HENRION W
REBIEN M
STAUSS P
LANGE H
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Authors:
HENRION W
REBIEN M
ANTONOV VN
JEPSEN O
LANGE H
Citation: W. Henrion et al., OPTICAL CHARACTERIZATION OF RU2SI3 BY SPECTROSCOPIC ELLIPSOMETRY, UV-VIS-NIR SPECTROSCOPY AND BAND-STRUCTURE CALCULATIONS, Thin solid films, 313, 1998, pp. 218-221
Authors:
ANGERMANN H
HENRION W
REBIEN M
FISCHER D
ZETTLER JT
ROSELER A
Citation: H. Angermann et al., H-TERMINATED SILICON - SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS CORRELATED TO THE SURFACE ELECTRONIC-PROPERTIES, Thin solid films, 313, 1998, pp. 552-556
Authors:
FILONOV AB
MIGAS DB
SHAPOSHNIKOV VL
BORISENKO VE
HENRION W
REBIEN M
STAUSS P
LANGE H
BEHR G
Citation: Ab. Filonov et al., THEORETICAL AND EXPERIMENTAL-STUDY OF INTERBAND OPTICAL-TRANSITIONS IN SEMICONDUCTING IRON DISILICIDE, Journal of applied physics, 83(8), 1998, pp. 4410-4414
Authors:
ANGERMANN H
HENRION W
REBIEN M
KLIEFOTH K
FISCHER D
ZETTLER JT
Citation: H. Angermann et al., EVOLUTION OF ELECTRONICALLY ACTIVE DEFECTS DURING THE FORMATION OF SISIO2 INTERFACE MONITORED BY COMBINED SURFACE PHOTOVOLTAGE AND SPECTROSCOPIC ELLIPSOMETRY MEASUREMENTS/, Microelectronic engineering, 36(1-4), 1997, pp. 43-46
Authors:
ANGERMANN H
HENRION W
REBIEN M
ZETTLER JT
ROSELER A
Citation: H. Angermann et al., CHARACTERIZATION OF CHEMICALLY PREPARED SI-SURFACES BY UV-VIS AND IR SPECTROSCOPIC ELLIPSOMETRY AND SURFACE PHOTOVOLTAGE, Surface science, 388(1-3), 1997, pp. 15-23