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Results: 3
MODELING THE FIELD SOFT ERROR RATE OF DRAMS BY VARYING THE CRITICAL CELL CHARGE
Authors: SCHLEIFER H KOWARIK O HOFFMANN K RECZEK W
Citation: H. Schleifer et al., MODELING THE FIELD SOFT ERROR RATE OF DRAMS BY VARYING THE CRITICAL CELL CHARGE, Microelectronics and reliability, 38(6-8), 1998, pp. 1139-1141
DESIGN CONCEPT FOR RADIATION HARDENING OF LOW-POWER AND LOW-VOLTAGE DYNAMIC MEMORIES
Authors: SCHLEIFER H ROPP TVD HOFFMANN K RECZEK W
Citation: H. Schleifer et al., DESIGN CONCEPT FOR RADIATION HARDENING OF LOW-POWER AND LOW-VOLTAGE DYNAMIC MEMORIES, IEEE journal of solid-state circuits, 30(7), 1995, pp. 826-829
INFLUENCE OF THE SERIES RESISTANCE OF ON-CHIP POWER-SUPPLY BUSES ON INTERNAL DEVICE FAILURE AFTER ESD STRESS
Authors: TERLETZKI H NIKUTTA W RECZEK W
Citation: H. Terletzki et al., INFLUENCE OF THE SERIES RESISTANCE OF ON-CHIP POWER-SUPPLY BUSES ON INTERNAL DEVICE FAILURE AFTER ESD STRESS, I.E.E.E. transactions on electron devices, 40(11), 1993, pp. 2081-2083
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