MODELING THE FIELD SOFT ERROR RATE OF DRAMS BY VARYING THE CRITICAL CELL CHARGE

Authors
SCHLEIFER H KOWARIK O HOFFMANN K RECZEK W
Citation
H. Schleifer et al., MODELING THE FIELD SOFT ERROR RATE OF DRAMS BY VARYING THE CRITICAL CELL CHARGE, Microelectronics and reliability, 38(6-8), 1998, pp. 1139-1141
Citations number
2
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Microelectronics and reliability → ACNP
ISSN journal
00262714
Volume
38
Issue
6-8
Year of publication
1998
Pages
1139 - 1141
Database
ISI
SICI code
0026-2714(1998)38:6-8<1139:MTFSER>2.0.ZU;2-J
Abstract
The Field Soft Error Rate (FSER) has been determined by the variation of the critical charge and the measurement of the charge collection vo lume determined by alpha-particle irradiation. The modelled FSER versu s critical charge dependence agrees well to the one of the Field Soft Error measurements. The results further show, that the impact of the o n-chip Alpha-Particle flux can be neglected. (C) 1998 Elsevier Science Ltd. All rights reserved.