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Results: 1-25 | 26-27 |
Results: 26-27/27
GROWTH AND CHARACTERIZATION OF STRAIN COMPENSATED SI1-X-YGEXCY EPITAXIAL LAYERS
Authors: REGOLINI JL GISBERT F DOLINO G BOUCAUD P
Citation: Jl. Regolini et al., GROWTH AND CHARACTERIZATION OF STRAIN COMPENSATED SI1-X-YGEXCY EPITAXIAL LAYERS, Materials letters, 18(1-2), 1993, pp. 57-60
EFFECT OF SUB-BAND-GAP ILLUMINATION ON BETA-FESI2 N-TYPE SI DIODES UNDER REVERSE BIAS - RESPONSE/
Authors: LEIBOVITCH M SHAPIRA Y REGOLINI JL
Citation: M. Leibovitch et al., EFFECT OF SUB-BAND-GAP ILLUMINATION ON BETA-FESI2 N-TYPE SI DIODES UNDER REVERSE BIAS - RESPONSE/, Applied physics letters, 63(15), 1993, pp. 2154-2154
Risultati: 1-25 | 26-27 |