Authors: SIMPSON DE GOLDEN DL REHM JM KOCHAR MS SIMONS KB

Citation: De. Simpson et al., THE COSTS VERSUS THE PERCEIVED BENEFITS OF AN LCME INSTITUTIONAL SELF-STUDY, Academic medicine, 73(9), 1998, pp. 1009-1012

Authors: REHM JM MCLENDON GL FAUCHET PM

Citation: Jm. Rehm et al., CONDUCTION AND VALENCE-BAND EDGES OF POROUS SILICON DETERMINED BY ELECTRON-TRANSFER, Journal of the American Chemical Society, 118(18), 1996, pp. 4490-4491

Authors: REHM JM MCLENDON GL TSYBESKOV L FAUCHET PM

Citation: Jm. Rehm et al., HOW METHANOL AFFECTS THE SURFACE OF BLUE AND RED EMITTING POROUS SILICON, Applied physics letters, 66(26), 1995, pp. 3669-3671

Authors: CHEN W REHM JM MEYERS C FREEDHOFF MI MARCHETTI A MCLENDON G

Citation: W. Chen et al., LUMINESCENCE PROPERTIES OF INDIRECT BANDGAP SEMICONDUCTORS - NANOCRYSTALS OF SILVER BROMIDE, Molecular crystals and liquid crystals science and technology. Section A, Molecular crystals and liquid crystals, 252, 1994, pp. 79-86

Authors: PENG C FAUCHET PM REHM JM MCLENDON GL SEIFERTH F KURINEC SK

Citation: C. Peng et al., ION-IMPLANTATION OF POROUS SILICON, Applied physics letters, 64(10), 1994, pp. 1259-1261

Authors: CHEN W MCLENDON G MARCHETTI A REHM JM FREEDHOFF MI MYERS C

Citation: W. Chen et al., SIZE DEPENDENCE OF RADIATIVE RATES IN THE INDIRECT BAND-GAP MATERIAL AGBR, Journal of the American Chemical Society, 116(4), 1994, pp. 1585-1586