ACNP - Italian Periodicals Catalogue

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Results: 1-25 | 26-43 |

Results: 26-43/43

CHEMICAL-VAPOR-DEPOSITION OF EPITAXIAL SILICON-GERMANIUM FROM SILANE AND GERMANE .1. KINETICS

Authors: JANG SM LIAO K REIF R

Citation: Sm. Jang et al., CHEMICAL-VAPOR-DEPOSITION OF EPITAXIAL SILICON-GERMANIUM FROM SILANE AND GERMANE .1. KINETICS, Journal of the Electrochemical Society, 142(10), 1995, pp. 3513-3520

CHEMICAL-VAPOR-DEPOSITION OF EPITAXIAL SILICON-GERMANIUM FROM SILANE AND GERMANE .2. IN-SITU BORON, ARSENIC, AND PHOSPHORUS DOPING

Authors: JANG SM LIAO K REIF R

Citation: Sm. Jang et al., CHEMICAL-VAPOR-DEPOSITION OF EPITAXIAL SILICON-GERMANIUM FROM SILANE AND GERMANE .2. IN-SITU BORON, ARSENIC, AND PHOSPHORUS DOPING, Journal of the Electrochemical Society, 142(10), 1995, pp. 3520-3527

AIR-BRIDGE MICROCAVITIES

Authors: VILLENEUVE PR FAN SH JOANNOPOULOS JD LIM KY PETRICH GS KOLODZIEJSKI LA REIF R

Citation: Pr. Villeneuve et al., AIR-BRIDGE MICROCAVITIES, Applied physics letters, 67(2), 1995, pp. 167-169

POLYCRYSTALLINE SILICON-GERMANIUM FILMS ON OXIDE USING PLASMA-ENHANCED VERY-LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION

Authors: TSAI JA REIF R

Citation: Ja. Tsai et R. Reif, POLYCRYSTALLINE SILICON-GERMANIUM FILMS ON OXIDE USING PLASMA-ENHANCED VERY-LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 66(14), 1995, pp. 1809-1811

EFFECT OF INTERFACIAL OXIDE ON STATIC AND HIGH-FREQUENCY PERFORMANCE IN POLYEMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION

Authors: CHYAN YF SZE SM CHANG CY REIF R

Citation: Yf. Chyan et al., EFFECT OF INTERFACIAL OXIDE ON STATIC AND HIGH-FREQUENCY PERFORMANCE IN POLYEMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION, JPN J A P 1, 33(5A), 1994, pp. 2487-2493

TEMPERATURE INFLUENCE ON THE GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS WITH ARBITRARY BAND STRUCTURES

Authors: CHYAN YF SZE SM CHANG CY LIAO K REIF R

Citation: Yf. Chyan et al., TEMPERATURE INFLUENCE ON THE GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS WITH ARBITRARY BAND STRUCTURES, JPN J A P 1, 33(5A), 1994, pp. 2619-2625

EFFECT OF GE CONCENTRATION ON STATIC AND MICROWAVE PERFORMANCES IN GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION

Authors: CHYAN YF SZE SM CHANG CY REIF R

Citation: Yf. Chyan et al., EFFECT OF GE CONCENTRATION ON STATIC AND MICROWAVE PERFORMANCES IN GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION, JPN J A P 1, 33(4A), 1994, pp. 1803-1808

RESISTIVITY STUDY OF P-IMPLANTED, B-IMPLANTED, AND BF2-IMPLANTED POLYCRYSTALLINE SI1-XGEX FILMS WITH SUBSEQUENT ANNEALING

Authors: NOGUCHI T TSAI JA TANG AJ REIF R

Citation: T. Noguchi et al., RESISTIVITY STUDY OF P-IMPLANTED, B-IMPLANTED, AND BF2-IMPLANTED POLYCRYSTALLINE SI1-XGEX FILMS WITH SUBSEQUENT ANNEALING, JPN J A P 2, 33(12B), 1994, pp. 1748-1750

IN-SITU SEMICONDUCTOR-MATERIALS CHARACTERIZATION BY EMISSION FOURIER-TRANSFORM INFRARED-SPECTROSCOPY

Authors: ZHOU ZH COMPTON S YANG I REIF R

Citation: Zh. Zhou et al., IN-SITU SEMICONDUCTOR-MATERIALS CHARACTERIZATION BY EMISSION FOURIER-TRANSFORM INFRARED-SPECTROSCOPY, IEEE transactions on semiconductor manufacturing, 7(1), 1994, pp. 87-91

REAL-TIME IN-SITU EPITAXIAL FILM THICKNESS MONITORING AND CONTROL USING AN EMISSION FOURIER-TRANSFORM INFRARED SPECTROMETER

Authors: ZHOU ZH YANG I KIM H YU F REIF R

Citation: Zh. Zhou et al., REAL-TIME IN-SITU EPITAXIAL FILM THICKNESS MONITORING AND CONTROL USING AN EMISSION FOURIER-TRANSFORM INFRARED SPECTROMETER, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1938-1942

ANALYTICAL MODELING OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION

Authors: CHYAN YF CHANG CY SZE SM LIN MJ LIAO K REIF R

Citation: Yf. Chyan et al., ANALYTICAL MODELING OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION, Solid-state electronics, 37(8), 1994, pp. 1521-1529

HIGH-LEVEL INJECTION INFLUENCE ON THE HIGH-FREQUENCY PERFORMANCE OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS

Authors: CHYAN YF SZE SM CHANG CY CHIUEH HM REIF R

Citation: Yf. Chyan et al., HIGH-LEVEL INJECTION INFLUENCE ON THE HIGH-FREQUENCY PERFORMANCE OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS, Solid-state electronics, 37(8), 1994, pp. 1531-1536

EPIFILM THICKNESS MEASUREMENTS USING FOURIER-TRANSFORM INFRARED-SPECTROSCOPY - EFFECT OF REFRACTIVE-INDEX DISPERSION AND REFRACTIVE-INDEX MEASUREMENT

Authors: ZHOU ZH CHOI BG FLIK MI FAN S REIF R

Citation: Zh. Zhou et al., EPIFILM THICKNESS MEASUREMENTS USING FOURIER-TRANSFORM INFRARED-SPECTROSCOPY - EFFECT OF REFRACTIVE-INDEX DISPERSION AND REFRACTIVE-INDEX MEASUREMENT, Journal of applied physics, 76(4), 1994, pp. 2448-2454

POLYCRYSTALLINE SILICON THIN-FILMS PROCESSED WITH SILICON ION-IMPLANTATION AND SUBSEQUENT SOLID-PHASE CRYSTALLIZATION - THEORY, EXPERIMENTS, AND THIN-FILM-TRANSISTOR APPLICATIONS

Authors: YAMAUCHI N REIF R

Citation: N. Yamauchi et R. Reif, POLYCRYSTALLINE SILICON THIN-FILMS PROCESSED WITH SILICON ION-IMPLANTATION AND SUBSEQUENT SOLID-PHASE CRYSTALLIZATION - THEORY, EXPERIMENTS, AND THIN-FILM-TRANSISTOR APPLICATIONS, Journal of applied physics, 75(7), 1994, pp. 3235-3257

FUNDAMENTALS OF EPITAXIAL SILICON FILM THICKNESS MEASUREMENTS USING EMISSION AND REFLECTION FOURIER-TRANSFORM INFRARED-SPECTROSCOPY

Authors: ZHOU ZH YANG I YU FZ REIF R

Citation: Zh. Zhou et al., FUNDAMENTALS OF EPITAXIAL SILICON FILM THICKNESS MEASUREMENTS USING EMISSION AND REFLECTION FOURIER-TRANSFORM INFRARED-SPECTROSCOPY, Journal of applied physics, 73(11), 1993, pp. 7331-7337

THE FLUID SYSTEMS FOR THE SLD CHERENKOV RING IMAGING DETECTOR

Authors: ABE K ANTILOGUS P ASTON D BAIRD K BEAN A BENDAVID R BIENZ T BIRD F CALDWELL DO CAVALLISFORZA M COLLER J COYLE P COYNE D DASU S DOLINSKY S DOLIVEIRA A DUBOSCQ J DUNWOODIE W GAGNON P HALLEWELL G HASEGAWA K HASEGAWA Y HUBER J IWASAKI Y JACQUES P JOHNSON RA KALELKAR M KAWAHARA H KWON Y LEITH DWGS LIU X LU A MANLY S MARTINEZ J MATHYS L MCCULLOCH M MCHUGH S MCSHURLEY D MULLER G MULLER D NAGAMINE T NUSSBAUM M PAVEL TJ PETERSON H PLANO R RATCLIFF B REIF R RENSING P SANTHA AKS SCHNEIDER M SCHULTZ D SHANK JT SHAPIRO S SHAW H SIMOPOULOS C SNYDER J SOKOLOFF MD SOLODOV E STAMER P STOCKDALE I SUEKANE F TOGE N TURK J VAVRA J WATT R WEBER T WHITAKER JS WILLIAMS DA WILLIAMS SH WILSON RJ WORD G YELLIN S YUTA H

Citation: K. Abe et al., THE FLUID SYSTEMS FOR THE SLD CHERENKOV RING IMAGING DETECTOR, IEEE transactions on nuclear science, 40(4), 1993, pp. 593-597

REAL-TIME, IN-SITU MONITORING OF ROOM-TEMPERATURE SILICON SURFACE CLEANING USING HYDROGEN AND AMMONIA PLASMAS

Authors: ZHOU ZH AYDIL ES GOTTSCHO RA CHABAL YJ REIF R

Citation: Zh. Zhou et al., REAL-TIME, IN-SITU MONITORING OF ROOM-TEMPERATURE SILICON SURFACE CLEANING USING HYDROGEN AND AMMONIA PLASMAS, Journal of the Electrochemical Society, 140(11), 1993, pp. 3316-3321

PHOSPHORUS DOPING OF EPITAXIAL SI AND SI1-XGEX AT VERY-LOW PRESSURE

Authors: JANG SM LIAO K REIF R

Citation: Sm. Jang et al., PHOSPHORUS DOPING OF EPITAXIAL SI AND SI1-XGEX AT VERY-LOW PRESSURE, Applied physics letters, 63(12), 1993, pp. 1675-1677

Risultati: 1-25 | 26-43 |