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Results: 1-9 |
Results: 9
ELECTRICAL ACTIVATION OF BORON-IMPLANTED IN P-HGCDTE (X=0.22) BY LOW-TEMPERATURE ANNEALING UNDER AN ANODIC OXIDE
Authors: TALIPOV NK OVSYUK VN REMESNIK VG VASILYEV VV
Citation: Nk. Talipov et al., ELECTRICAL ACTIVATION OF BORON-IMPLANTED IN P-HGCDTE (X=0.22) BY LOW-TEMPERATURE ANNEALING UNDER AN ANODIC OXIDE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 266-269
METHOD FOR THE CHARACTERIZATION OF ELECTRON, LIGHT-HOLE AND HEAVY-HOLE CONCENTRATIONS AND MOBILITIES IN NARROW-GAP P-TYPE HGCDTE
Authors: TALIPOV NK OVSYUK VN REMESNIK VG SCHASCHKIN VV
Citation: Nk. Talipov et al., METHOD FOR THE CHARACTERIZATION OF ELECTRON, LIGHT-HOLE AND HEAVY-HOLE CONCENTRATIONS AND MOBILITIES IN NARROW-GAP P-TYPE HGCDTE, Materials science & engineering. B, Solid-state materials for advanced technology, 44(1-3), 1997, pp. 278-282
PLANAR PHOTODIODES BASED ON P-HGCDTE (X=0.22) EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors: OVSYUK VN REMESNIK VG STUDENIKIN SA SUSLYAKOV AO TALIPOV NK VASILEV VV ZAHARYASH TI SIDOROV YG DVORETSKY SA MIKHAYLOV NN LIBERMAN VG VARAVIN VS
Citation: Vn. Ovsyuk et al., PLANAR PHOTODIODES BASED ON P-HGCDTE (X=0.22) EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Infrared physics & technology, 37(3), 1996, pp. 321-323
PLANAR PHOTODIODES BASED ON CDXHG1-XTE EPITAXIAL LAYERS GROWN BY THE METHOD OF MOLECULAR-BEAM EPITAXY
Authors: OVSYUK VN VASILEV VV ZAKHARYASH TI REMESNIK VG STUDENIKIN SA SUSLYAKOV AO TALIPOV NK SIDOROV YG DVORETSKII SA MIKHAILOV NN LIBERMAN VG VARAVIN VS
Citation: Vn. Ovsyuk et al., PLANAR PHOTODIODES BASED ON CDXHG1-XTE EPITAXIAL LAYERS GROWN BY THE METHOD OF MOLECULAR-BEAM EPITAXY, Semiconductors, 30(2), 1996, pp. 109-111
GROWTH OF CDXHG1-XTE FILMS BY VAPOR-PHASE EPITAXY OF HGTE ON CDTE SUBSTRATES FOLLOWED BY INTERDIFFUSION
Authors: VARAVIN VS SIDOROV YG REMESNIK VG CHIKICHEV SI NIS IE
Citation: Vs. Varavin et al., GROWTH OF CDXHG1-XTE FILMS BY VAPOR-PHASE EPITAXY OF HGTE ON CDTE SUBSTRATES FOLLOWED BY INTERDIFFUSION, Semiconductors, 28(4), 1994, pp. 348-352
INVESTIGATION OF RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN EPITAXIAL P-TYPE CDXHG1-XTE CDTE STRUCTURES BY THE MICROWAVE METHOD
Authors: BORODOVSKII PA BULDYGIN AF REMESNIK VG
Citation: Pa. Borodovskii et al., INVESTIGATION OF RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN EPITAXIAL P-TYPE CDXHG1-XTE CDTE STRUCTURES BY THE MICROWAVE METHOD, Semiconductors, 28(12), 1994, pp. 1159-1161
DETERMINATION OF PARAMETERS OF CHARGE-CAR RIERS IN NARROW-BAND A2B6 P-TYPE SEMICONDUCTORS BASED ON MAGNETORESISTANCE
Authors: TALIPOV NK REMESNIK VG
Citation: Nk. Talipov et Vg. Remesnik, DETERMINATION OF PARAMETERS OF CHARGE-CAR RIERS IN NARROW-BAND A2B6 P-TYPE SEMICONDUCTORS BASED ON MAGNETORESISTANCE, Pis'ma v Zurnal tehniceskoj fiziki, 20(5), 1994, pp. 57-61
THE GROWTH OF HIGH-QUALITY MCT FILMS BY MBE USING IN-SITU ELLIPSOMETRY
Authors: SVITASHEV KK DVORETSKY SA SIDOROV YG SHVETS VA MARDEZHOV AS NIS IE VARAVIN VS LIBERMAN V REMESNIK VG
Citation: Kk. Svitashev et al., THE GROWTH OF HIGH-QUALITY MCT FILMS BY MBE USING IN-SITU ELLIPSOMETRY, Crystal research and technology, 29(7), 1994, pp. 931-937
INVERSION OF THE CONDUCTION OF CDXHG1-XTE FILMS SUBJECTED TO A PLASMATREATMENT
Authors: DVURECHENSKII AV REMESNIK VG RYAZANTSEV IA TALIPOV NK
Citation: Av. Dvurechenskii et al., INVERSION OF THE CONDUCTION OF CDXHG1-XTE FILMS SUBJECTED TO A PLASMATREATMENT, Semiconductors, 27(1), 1993, pp. 90-92
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