Authors: CHEN JX LI AZ YANG QK LIN C REN YC JIN SR LI CC QI M

Citation: Jx. Chen et al., NOVEL IN0.49GA0.52P (IN)GAAS/GAAS P-TYPE MODULATION-DOPED HETEROSTRUCTURE GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Journal of crystal growth, 193(1-2), 1998, pp. 28-32

Authors: ZHANG YG LI AZ CHEN JX REN YC

Citation: Yg. Zhang et al., INALAS INGAAS QUANTUM-WELL INFRARED PHOTODETECTORS WITH 3-5 MU-M BANDGROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, Chinese Physics Letters, 14(6), 1997, pp. 443-445

Authors: LI AZ CHEN JX QI M REN YC

Citation: Az. Li et al., THE EFFECT OF III-V RATIO AT THE SUBSTRATE SURFACE ON THE QUALITY OF INP GROWN BY GSMBE, Journal of crystal growth, 164(1-4), 1996, pp. 84-87

Authors: CHEN JX LI AZ REN YC QI M CHANG YG

Citation: Jx. Chen et al., PARAMETRIC STUDY ON LATTICE-MATCHED AND PSEUDOMORPHIC INGAAS INALAS/INP MODULATION-DOPED HETEROSTRUCTURES GROWN BY GSMBE/, Journal of crystal growth, 164(1-4), 1996, pp. 460-464

Authors: REN YC

Citation: Yc. Ren, THE P-REGULAR CLASS LENGTH AND THE P-RANK IN A P-SOLVABLE GROUP, Chinese Science Bulletin, 39(15), 1994, pp. 1245-1248