NOVEL IN0.49GA0.52P (IN)GAAS/GAAS P-TYPE MODULATION-DOPED HETEROSTRUCTURE GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/

In0.49Ga0.51P/(In)GaAs/GaAs heterostructure is an excellent candidate for two dimensional hole gas (2DHG) system as it had a large valence b and offset ratio. In this paper we reported the growth of In0.49Ga0.51 P/(In)GaAs/GaAs p-type modulation doped heterostructures by gas source molecular beam epitaxy. Electrical and low temperature photoluminesce nce properties of structures with different p-channels and doping meth ods were investigated. Hole mobilities of 131 cm(2)/V s at 300 K and 2 020 cm(2)/V a at 77 K for a homogeneity doped GaAs channel structure w ere obtained. By using delta-doping technique, hole mobilities of 191 cm(2)/V s at 300 K and 2831 cm(2)/V s at 77 K were achieved. The Hall mobilities could be still slightly enhanced when using pseudomorphic I nGaAs channel instead of GaAs channel. The change of hole mobilities w ere qualitatively explained by the ionized impurity scattering mechani sm. (C) 1998 Elsevier Science B.V. All rights reserved.