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Authors: NIKOLAEV AE RENDAKOVA SV NIKITINA IP VASSILEVSKI KV DMITRIEV VA
Citation: Ae. Nikolaev et al., GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY ON P-TYPE 6H-SIC LAYERS, Journal of electronic materials, 27(4), 1998, pp. 288-291

Authors: RENDAKOVA SV NIKITINA IP TREGUBOVA AS DMITRIEV VA
Citation: Sv. Rendakova et al., MICROPIPE AND DISLOCATION DENSITY REDUCTION IN 6H-SIC AND 4H-SIC STRUCTURES GROWN BY LIQUID-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 292-295

Authors: NIKOLAEV AE IVANTSOV VA RENDAKOVA SV BLASHENKOV MN DMITRIEV VA
Citation: Ae. Nikolaev et al., SIC LIQUID-PHASE EPITAXY ON PATTERNED SUBSTRATES, Journal of crystal growth, 166(1-4), 1996, pp. 607-611
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