Authors:
NIKOLAEV AE
RENDAKOVA SV
NIKITINA IP
VASSILEVSKI KV
DMITRIEV VA
Citation: Ae. Nikolaev et al., GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY ON P-TYPE 6H-SIC LAYERS, Journal of electronic materials, 27(4), 1998, pp. 288-291
Authors:
RENDAKOVA SV
NIKITINA IP
TREGUBOVA AS
DMITRIEV VA
Citation: Sv. Rendakova et al., MICROPIPE AND DISLOCATION DENSITY REDUCTION IN 6H-SIC AND 4H-SIC STRUCTURES GROWN BY LIQUID-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 292-295